Effect of Carrier Transit Delay on Complementary Metal--Oxide--Semiconductor Switching Performance

Effect of Carrier Transit Delay on Complementary Metal--Oxide--Semiconductor Switching Performance

The high-speed switching performance of a complementary metal--oxide--semiconductor field-effect transistor (CMOSFET) inverters is analyzed. It is found that the propagation delay of an inverter can no lomger be described by a DC-current-based estimate, but that the charging/discharging current is e...

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Veröffentlicht in:Japanese Journal of Applied Physics 2010-04, Vol.49 (4), p.04DC15-04DC15-4
Hauptverfasser: Hori, Daisuke, Miyake, Masataka, Sadachika, Norio, Mattausch, Hans-Juergen, Miura-Mattausch, Mitiko, Iizuka, Takahiro, Hoshida, Teruhiko, Matsuzawa, Kazuya, Sahara, Yasuyuki, Tsukada, Toshiro
Format: Artikel
Sprache:eng
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Zusammenfassung:The high-speed switching performance of a complementary metal--oxide--semiconductor field-effect transistor (CMOSFET) inverters is analyzed. It is found that the propagation delay of an inverter can no lomger be described by a DC-current-based estimate, but that the charging/discharging current is essential for the propagation delay prediction under high-frequency operation.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.04DC15