Transparent-Oxide--Semiconductor Based Top-Gate Self-Alignment Thin-Film Transistors

Top-gate self-aligned transparent-oxide--semiconductor transistors with indium--zinc-oxide as a semiconductor have been studied. During transistor fabrication, successive sputtering of oxide semiconductor and insulator without breaking the vacuum can be realized owing to the transparency of oxide semiconductor. The overlapping length between the gate--source and gate--drain electrodes was as small as 0.7 \mbox{$\mu$m}. The obtained field-effect mobility, on--off ratio, threshold voltage, mutual conductance, and subthreshold slope were 30 cm 2 V -1 s -1 , $10^{5}$, $-3$ V, 2 mS/mm, and 0.7 V/decade, respectively.