Characteristics of Excimer Laser-Annealed Thin-Film Transistors on the Polycrystalline Silicon Morphology Formed in the Single and Double (Overlap) Scanned Area

In this work we investigated the material properties and electrical performance of polycrystalline silicon (poly-Si) films formed in the single and double (overlap) scanned area of excimer laser in the long axis direction at various energy densities. Poly-Si thin film transistors (TFTs) were fabricated by using the material formed by the excimer laser annealing (ELA) process. We found that the device performance of poly-Si films formed at the energy density of 200 mJ/cm 2 is approximately equal to the single and double scanned area, whose overlapping irradiation does not change the characteristics of TFTs. Based on this result, a large poly-Si panel using the ELA method can be fabricated by overlapping the laser scans in the long axis direction.