p-Channel Tin Monoxide Thin Film Transistor Fabricated by Vacuum Thermal Evaporation

By using tin monoxide films, p-channel oxide semiconductor thin film transistors were fabricated with a bottom-gate and bottom-contact structure. A p-type tin monoxide semiconductor thin film was obtained from tin monoxide powder by vacuum thermal evaporation. The as-deposited film showed an amorphous phase, and a polycrystalline tin monoxide was obtained by thermal annealing after the deposition. The hole concentration was on the order of $10^{17}$ cm -3 , and the Hall mobility was 2.83 cm 2 V -1 s -1 . The resulting on-current/off-current ratio was more than $10^{2}$, and the field-effect mobility was approximately $4\times 10^{-5}$ cm 2 V -1 s -1 .