Organic Inverter Using Monolithically Stacked Static Induction Transistors

Organic Inverter Using Monolithically Stacked Static Induction Transistors

We fabricated monolithic organic inverters using a stacked structure of two organic static induction transistors (SITs). The operating characteristics of a p-channel transistor load and p-channel transistor drive-type inverter in which pentacene films are employed as an organic semiconductor materia...

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Veröffentlicht in:Japanese Journal of Applied Physics 2010-01, Vol.49 (1), p.01AB12-01AB12-4
Hauptverfasser: Iechi, Hiroyuki, Watanabe, Yasuyuki, Yamauchi, Hiroshi, Kudo, Kazuhiro
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container_title Japanese Journal of Applied Physics
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creator Iechi, Hiroyuki
Watanabe, Yasuyuki
Yamauchi, Hiroshi
Kudo, Kazuhiro
description We fabricated monolithic organic inverters using a stacked structure of two organic static induction transistors (SITs). The operating characteristics of a p-channel transistor load and p-channel transistor drive-type inverter in which pentacene films are employed as an organic semiconductor material are described. The gain transfer characteristics of a pentacene SIT inverter based on an enhancement-load/enhancement-drive layout showed a threshold voltage of approximately $-1$ V and a relatively large voltage gain of approximately 1.5. The advantages of this novel device structure are the controllability of the operational characteristics of each SIT and the simple device fabrication process.
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title Organic Inverter Using Monolithically Stacked Static Induction Transistors
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