Organic Inverter Using Monolithically Stacked Static Induction Transistors

We fabricated monolithic organic inverters using a stacked structure of two organic static induction transistors (SITs). The operating characteristics of a p-channel transistor load and p-channel transistor drive-type inverter in which pentacene films are employed as an organic semiconductor materia...

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Veröffentlicht in:Japanese Journal of Applied Physics 2010-01, Vol.49 (1), p.01AB12-01AB12-4
Hauptverfasser: Iechi, Hiroyuki, Watanabe, Yasuyuki, Yamauchi, Hiroshi, Kudo, Kazuhiro
Format: Artikel
Sprache:eng
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Zusammenfassung:We fabricated monolithic organic inverters using a stacked structure of two organic static induction transistors (SITs). The operating characteristics of a p-channel transistor load and p-channel transistor drive-type inverter in which pentacene films are employed as an organic semiconductor material are described. The gain transfer characteristics of a pentacene SIT inverter based on an enhancement-load/enhancement-drive layout showed a threshold voltage of approximately $-1$ V and a relatively large voltage gain of approximately 1.5. The advantages of this novel device structure are the controllability of the operational characteristics of each SIT and the simple device fabrication process.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.01AB12