Nanomechanical Response of the Si Lattice to Hydrogen Implantation and Annealing for Layer Splitting

Nanomechanical Response of the Si Lattice to Hydrogen Implantation and Annealing for Layer Splitting

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Veröffentlicht in:Japanese Journal of Applied Physics 2009-10, Vol.48 (10), p.101202
Hauptverfasser: Gu, Diefeng, Baumgart, Helmut, Bourdelle, Konstantin K., Celler, George K., Elmustafa, A. A.
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container_issue 10
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container_title Japanese Journal of Applied Physics
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creator Gu, Diefeng
Baumgart, Helmut
Bourdelle, Konstantin K.
Celler, George K.
Elmustafa, A. A.
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doi_str_mv 10.1143/JJAP.48.101202
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title Nanomechanical Response of the Si Lattice to Hydrogen Implantation and Annealing for Layer Splitting
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