Performance and Stability Characterization of Bottom Gated Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by RF and DC Sputtering

Performance and Stability Characterization of Bottom Gated Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by RF and DC Sputtering

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Veröffentlicht in:Japanese Journal of Applied Physics 2009-04, Vol.48 (4S), p.4
Hauptverfasser: Park, Sung-Soo, Choi, Won-Ho, Nam, Dong-Ho, Chai, Kwang-il, Jeong, Jae-Kyeong, Lee, Hi-Deok, Lee, Ga-Won
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container_end_page
container_issue 4S
container_start_page 4
container_title Japanese Journal of Applied Physics
container_volume 48
creator Park, Sung-Soo
Choi, Won-Ho
Nam, Dong-Ho
Chai, Kwang-il
Jeong, Jae-Kyeong
Lee, Hi-Deok
Lee, Ga-Won
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doi_str_mv 10.1143/JJAP.48.04C134
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_48_04C134</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_48_04C134</sourcerecordid><originalsourceid>FETCH-LOGICAL-c331t-905a57ea55b40bda10ef6fa7d908a54f8abde69d5bb42efd82c00aa29b71294a3</originalsourceid><addsrcrecordid>eNotkL1OwzAcxC0EEqWwMvsFEuzEzsdYAi2tKrWiZWGJ_o4dapTYle0KymPwxDTAcqe74U76IXRLSUwpS-8Wi8k6ZkVMWEVTdoZGJ80jRjJ-jkaEJDRiZZJcoivv308x44yO0Pdauda6HkyjMBiJNwGE7nQ44moHDpqgnP6CoK3BtsX3NgTb4xkEJfGkt26_sweP50bqw1B33eCv2jR49amlwtudNniqux5vHRivfbDO45mzHwaLI36e_p4-VHizP4Thy7xdo4sWOq9u_n2MXqaP2-opWq5m82qyjJo0pSEqCQeeK-BcMCIkUKLarIVclqQAztoChFRZKbkQLFGtLJKGEICkFDlNSgbpGMV_u42z3jvV1nune3DHmpJ6IFoPRGtW1H9E0x8_UGxB</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Performance and Stability Characterization of Bottom Gated Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by RF and DC Sputtering</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Park, Sung-Soo ; Choi, Won-Ho ; Nam, Dong-Ho ; Chai, Kwang-il ; Jeong, Jae-Kyeong ; Lee, Hi-Deok ; Lee, Ga-Won</creator><creatorcontrib>Park, Sung-Soo ; Choi, Won-Ho ; Nam, Dong-Ho ; Chai, Kwang-il ; Jeong, Jae-Kyeong ; Lee, Hi-Deok ; Lee, Ga-Won</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.48.04C134</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-905a57ea55b40bda10ef6fa7d908a54f8abde69d5bb42efd82c00aa29b71294a3</citedby><cites>FETCH-LOGICAL-c331t-905a57ea55b40bda10ef6fa7d908a54f8abde69d5bb42efd82c00aa29b71294a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Park, Sung-Soo</creatorcontrib><creatorcontrib>Choi, Won-Ho</creatorcontrib><creatorcontrib>Nam, Dong-Ho</creatorcontrib><creatorcontrib>Chai, Kwang-il</creatorcontrib><creatorcontrib>Jeong, Jae-Kyeong</creatorcontrib><creatorcontrib>Lee, Hi-Deok</creatorcontrib><creatorcontrib>Lee, Ga-Won</creatorcontrib><title>Performance and Stability Characterization of Bottom Gated Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by RF and DC Sputtering</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNotkL1OwzAcxC0EEqWwMvsFEuzEzsdYAi2tKrWiZWGJ_o4dapTYle0KymPwxDTAcqe74U76IXRLSUwpS-8Wi8k6ZkVMWEVTdoZGJ80jRjJ-jkaEJDRiZZJcoivv308x44yO0Pdauda6HkyjMBiJNwGE7nQ44moHDpqgnP6CoK3BtsX3NgTb4xkEJfGkt26_sweP50bqw1B33eCv2jR49amlwtudNniqux5vHRivfbDO45mzHwaLI36e_p4-VHizP4Thy7xdo4sWOq9u_n2MXqaP2-opWq5m82qyjJo0pSEqCQeeK-BcMCIkUKLarIVclqQAztoChFRZKbkQLFGtLJKGEICkFDlNSgbpGMV_u42z3jvV1nune3DHmpJ6IFoPRGtW1H9E0x8_UGxB</recordid><startdate>20090401</startdate><enddate>20090401</enddate><creator>Park, Sung-Soo</creator><creator>Choi, Won-Ho</creator><creator>Nam, Dong-Ho</creator><creator>Chai, Kwang-il</creator><creator>Jeong, Jae-Kyeong</creator><creator>Lee, Hi-Deok</creator><creator>Lee, Ga-Won</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090401</creationdate><title>Performance and Stability Characterization of Bottom Gated Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by RF and DC Sputtering</title><author>Park, Sung-Soo ; Choi, Won-Ho ; Nam, Dong-Ho ; Chai, Kwang-il ; Jeong, Jae-Kyeong ; Lee, Hi-Deok ; Lee, Ga-Won</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c331t-905a57ea55b40bda10ef6fa7d908a54f8abde69d5bb42efd82c00aa29b71294a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Sung-Soo</creatorcontrib><creatorcontrib>Choi, Won-Ho</creatorcontrib><creatorcontrib>Nam, Dong-Ho</creatorcontrib><creatorcontrib>Chai, Kwang-il</creatorcontrib><creatorcontrib>Jeong, Jae-Kyeong</creatorcontrib><creatorcontrib>Lee, Hi-Deok</creatorcontrib><creatorcontrib>Lee, Ga-Won</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Sung-Soo</au><au>Choi, Won-Ho</au><au>Nam, Dong-Ho</au><au>Chai, Kwang-il</au><au>Jeong, Jae-Kyeong</au><au>Lee, Hi-Deok</au><au>Lee, Ga-Won</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performance and Stability Characterization of Bottom Gated Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by RF and DC Sputtering</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2009-04-01</date><risdate>2009</risdate><volume>48</volume><issue>4S</issue><spage>4</spage><pages>4-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.1143/JJAP.48.04C134</doi></addata></record>
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1347-4065
language eng
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Performance and Stability Characterization of Bottom Gated Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by RF and DC Sputtering
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T02%3A01%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Performance%20and%20Stability%20Characterization%20of%20Bottom%20Gated%20Amorphous%20Indium%20Gallium%20Zinc%20Oxide%20Thin%20Film%20Transistors%20Grown%20by%20RF%20and%20DC%20Sputtering&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Park,%20Sung-Soo&rft.date=2009-04-01&rft.volume=48&rft.issue=4S&rft.spage=4&rft.pages=4-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.48.04C134&rft_dat=%3Ccrossref%3E10_1143_JJAP_48_04C134%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true