AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

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Veröffentlicht in:Japanese Journal of Applied Physics 2009-04, Vol.48 (4S), p.4
Hauptverfasser: Visalli, Domenica, Hove, Marleen Van, Derluyn, Joff, Degroote, Stefan, Leys, Maarten, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf
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container_end_page
container_issue 4S
container_start_page 4
container_title Japanese Journal of Applied Physics
container_volume 48
creator Visalli, Domenica
Hove, Marleen Van
Derluyn, Joff
Degroote, Stefan
Leys, Maarten
Cheng, Kai
Germain, Marianne
Borghs, Gustaaf
description
doi_str_mv 10.1143/JJAP.48.04C101
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_48_04C101</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_48_04C101</sourcerecordid><originalsourceid>FETCH-LOGICAL-c239t-c1363130567ae2da5c82257a9ff6f726833e370c0ae272d3e99a7ae9a2ba84393</originalsourceid><addsrcrecordid>eNotkMtOwzAQRS0EEqWwZe0fSOpXXstS2oaqoggK28h1xm3AxMh2VPEHfDYJZTG6M_eORpqD0C0lMaWCT1ar6VMs8piIGSX0DI0oF1kkSJqcoxEhjEaiYOwSXXn_3o9pIugI_UzNUj5Ohvrr8L3tdgZwCQGc9cF1KnQOPLYtfmlMowbtdn0gQ-9q63DZ7A_4zoH8qO2xxW_WBLkHvGjA1NFca1ABb51sfeODdR4fm3DAxh7xpo2eYXBlq-AaXWhpPNz86xi9LubbWRmtN8uH2XQdKcaLECnKU045SdJMAqtlonLGkkwWWqc6Y2nOOfCMKNKnGas5FIXsNwvJdjIXvOBjFJ_uqv4970BXX675lO67oqQaOFYDx0rk1Ykj_wWg8WdV</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Visalli, Domenica ; Hove, Marleen Van ; Derluyn, Joff ; Degroote, Stefan ; Leys, Maarten ; Cheng, Kai ; Germain, Marianne ; Borghs, Gustaaf</creator><creatorcontrib>Visalli, Domenica ; Hove, Marleen Van ; Derluyn, Joff ; Degroote, Stefan ; Leys, Maarten ; Cheng, Kai ; Germain, Marianne ; Borghs, Gustaaf</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.48.04C101</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c239t-c1363130567ae2da5c82257a9ff6f726833e370c0ae272d3e99a7ae9a2ba84393</citedby><cites>FETCH-LOGICAL-c239t-c1363130567ae2da5c82257a9ff6f726833e370c0ae272d3e99a7ae9a2ba84393</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27907,27908</link.rule.ids></links><search><creatorcontrib>Visalli, Domenica</creatorcontrib><creatorcontrib>Hove, Marleen Van</creatorcontrib><creatorcontrib>Derluyn, Joff</creatorcontrib><creatorcontrib>Degroote, Stefan</creatorcontrib><creatorcontrib>Leys, Maarten</creatorcontrib><creatorcontrib>Cheng, Kai</creatorcontrib><creatorcontrib>Germain, Marianne</creatorcontrib><creatorcontrib>Borghs, Gustaaf</creatorcontrib><title>AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNotkMtOwzAQRS0EEqWwZe0fSOpXXstS2oaqoggK28h1xm3AxMh2VPEHfDYJZTG6M_eORpqD0C0lMaWCT1ar6VMs8piIGSX0DI0oF1kkSJqcoxEhjEaiYOwSXXn_3o9pIugI_UzNUj5Ohvrr8L3tdgZwCQGc9cF1KnQOPLYtfmlMowbtdn0gQ-9q63DZ7A_4zoH8qO2xxW_WBLkHvGjA1NFca1ABb51sfeODdR4fm3DAxh7xpo2eYXBlq-AaXWhpPNz86xi9LubbWRmtN8uH2XQdKcaLECnKU045SdJMAqtlonLGkkwWWqc6Y2nOOfCMKNKnGas5FIXsNwvJdjIXvOBjFJ_uqv4970BXX675lO67oqQaOFYDx0rk1Ykj_wWg8WdV</recordid><startdate>20090401</startdate><enddate>20090401</enddate><creator>Visalli, Domenica</creator><creator>Hove, Marleen Van</creator><creator>Derluyn, Joff</creator><creator>Degroote, Stefan</creator><creator>Leys, Maarten</creator><creator>Cheng, Kai</creator><creator>Germain, Marianne</creator><creator>Borghs, Gustaaf</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090401</creationdate><title>AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance</title><author>Visalli, Domenica ; Hove, Marleen Van ; Derluyn, Joff ; Degroote, Stefan ; Leys, Maarten ; Cheng, Kai ; Germain, Marianne ; Borghs, Gustaaf</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c239t-c1363130567ae2da5c82257a9ff6f726833e370c0ae272d3e99a7ae9a2ba84393</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Visalli, Domenica</creatorcontrib><creatorcontrib>Hove, Marleen Van</creatorcontrib><creatorcontrib>Derluyn, Joff</creatorcontrib><creatorcontrib>Degroote, Stefan</creatorcontrib><creatorcontrib>Leys, Maarten</creatorcontrib><creatorcontrib>Cheng, Kai</creatorcontrib><creatorcontrib>Germain, Marianne</creatorcontrib><creatorcontrib>Borghs, Gustaaf</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Visalli, Domenica</au><au>Hove, Marleen Van</au><au>Derluyn, Joff</au><au>Degroote, Stefan</au><au>Leys, Maarten</au><au>Cheng, Kai</au><au>Germain, Marianne</au><au>Borghs, Gustaaf</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2009-04-01</date><risdate>2009</risdate><volume>48</volume><issue>4S</issue><spage>4</spage><pages>4-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.1143/JJAP.48.04C101</doi></addata></record>
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issn 0021-4922
1347-4065
language eng
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T00%3A51%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=AlGaN/GaN/AlGaN%20Double%20Heterostructures%20on%20Silicon%20Substrates%20for%20High%20Breakdown%20Voltage%20Field-Effect%20Transistors%20with%20low%20On-Resistance&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Visalli,%20Domenica&rft.date=2009-04-01&rft.volume=48&rft.issue=4S&rft.spage=4&rft.pages=4-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.48.04C101&rft_dat=%3Ccrossref%3E10_1143_JJAP_48_04C101%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true