Accurate Extraction of Excess Channel Thermal Noise Coefficient in Berkeley Short-Channel Insulated Gate Field-Effect Transistor Model 4
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Veröffentlicht in: | Japanese Journal of Applied Physics 2009-04, Vol.48 (4S), p.4 |
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container_issue | 4S |
container_start_page | 4 |
container_title | Japanese Journal of Applied Physics |
container_volume | 48 |
creator | Jeon, Jongwook Lee, Jaehong Park, Chan Hyeong Lee, Hyunwoo Oh, Hansu Kang, Ho-Kyu Park, Byung-Gook Shin, Hyungcheol |
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doi_str_mv | 10.1143/JJAP.48.04C037 |
format | Article |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_48_04C037</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_48_04C037</sourcerecordid><originalsourceid>FETCH-LOGICAL-c286t-f0bb054019b17e1f475d0f4b045b6d79b26d2decfa627fa59d2f7d03e029cd753</originalsourceid><addsrcrecordid>eNo1kMtOwzAURC0EEqWwZe0fSLAdJ26WJepT5SFR1pFjX6uG1Ea2K9E_4LNJVViNRpo5i4PQPSU5pbx4WK-nrzmf5IQ3pBAXaEQLLjJOqvISjQhhNOM1Y9foJsaPoVYlpyP0M1XqEGQCPPtOQapkvcPeDE1BjLjZSeegx9sdhL3s8bO3EXDjwRirLLiErcOPED6hhyN-2_mQsv_PysVDP5A1Xpz4cwu9zmbGgEp4G6SLNiYf8JPXw5jfoisj-wh3fzlG7_PZtllmm5fFqpluMsUmVcoM6TpSckLrjgqghotSE8M7wsuu0qLuWKWZBmVkxYSRZa2ZEZoUQFittCiLMcrPXBV8jAFM-xXsXoZjS0l78tiePLZ80p49Fr_7QGfG</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Accurate Extraction of Excess Channel Thermal Noise Coefficient in Berkeley Short-Channel Insulated Gate Field-Effect Transistor Model 4</title><source>Institute of Physics Journals</source><creator>Jeon, Jongwook ; Lee, Jaehong ; Park, Chan Hyeong ; Lee, Hyunwoo ; Oh, Hansu ; Kang, Ho-Kyu ; Park, Byung-Gook ; Shin, Hyungcheol</creator><creatorcontrib>Jeon, Jongwook ; Lee, Jaehong ; Park, Chan Hyeong ; Lee, Hyunwoo ; Oh, Hansu ; Kang, Ho-Kyu ; Park, Byung-Gook ; Shin, Hyungcheol</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.48.04C037</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c286t-f0bb054019b17e1f475d0f4b045b6d79b26d2decfa627fa59d2f7d03e029cd753</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Jeon, Jongwook</creatorcontrib><creatorcontrib>Lee, Jaehong</creatorcontrib><creatorcontrib>Park, Chan Hyeong</creatorcontrib><creatorcontrib>Lee, Hyunwoo</creatorcontrib><creatorcontrib>Oh, Hansu</creatorcontrib><creatorcontrib>Kang, Ho-Kyu</creatorcontrib><creatorcontrib>Park, Byung-Gook</creatorcontrib><creatorcontrib>Shin, Hyungcheol</creatorcontrib><title>Accurate Extraction of Excess Channel Thermal Noise Coefficient in Berkeley Short-Channel Insulated Gate Field-Effect Transistor Model 4</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNo1kMtOwzAURC0EEqWwZe0fSLAdJ26WJepT5SFR1pFjX6uG1Ea2K9E_4LNJVViNRpo5i4PQPSU5pbx4WK-nrzmf5IQ3pBAXaEQLLjJOqvISjQhhNOM1Y9foJsaPoVYlpyP0M1XqEGQCPPtOQapkvcPeDE1BjLjZSeegx9sdhL3s8bO3EXDjwRirLLiErcOPED6hhyN-2_mQsv_PysVDP5A1Xpz4cwu9zmbGgEp4G6SLNiYf8JPXw5jfoisj-wh3fzlG7_PZtllmm5fFqpluMsUmVcoM6TpSckLrjgqghotSE8M7wsuu0qLuWKWZBmVkxYSRZa2ZEZoUQFittCiLMcrPXBV8jAFM-xXsXoZjS0l78tiePLZ80p49Fr_7QGfG</recordid><startdate>20090401</startdate><enddate>20090401</enddate><creator>Jeon, Jongwook</creator><creator>Lee, Jaehong</creator><creator>Park, Chan Hyeong</creator><creator>Lee, Hyunwoo</creator><creator>Oh, Hansu</creator><creator>Kang, Ho-Kyu</creator><creator>Park, Byung-Gook</creator><creator>Shin, Hyungcheol</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090401</creationdate><title>Accurate Extraction of Excess Channel Thermal Noise Coefficient in Berkeley Short-Channel Insulated Gate Field-Effect Transistor Model 4</title><author>Jeon, Jongwook ; Lee, Jaehong ; Park, Chan Hyeong ; Lee, Hyunwoo ; Oh, Hansu ; Kang, Ho-Kyu ; Park, Byung-Gook ; Shin, Hyungcheol</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c286t-f0bb054019b17e1f475d0f4b045b6d79b26d2decfa627fa59d2f7d03e029cd753</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jeon, Jongwook</creatorcontrib><creatorcontrib>Lee, Jaehong</creatorcontrib><creatorcontrib>Park, Chan Hyeong</creatorcontrib><creatorcontrib>Lee, Hyunwoo</creatorcontrib><creatorcontrib>Oh, Hansu</creatorcontrib><creatorcontrib>Kang, Ho-Kyu</creatorcontrib><creatorcontrib>Park, Byung-Gook</creatorcontrib><creatorcontrib>Shin, Hyungcheol</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jeon, Jongwook</au><au>Lee, Jaehong</au><au>Park, Chan Hyeong</au><au>Lee, Hyunwoo</au><au>Oh, Hansu</au><au>Kang, Ho-Kyu</au><au>Park, Byung-Gook</au><au>Shin, Hyungcheol</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Accurate Extraction of Excess Channel Thermal Noise Coefficient in Berkeley Short-Channel Insulated Gate Field-Effect Transistor Model 4</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2009-04-01</date><risdate>2009</risdate><volume>48</volume><issue>4S</issue><spage>4</spage><pages>4-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.1143/JJAP.48.04C037</doi></addata></record> |
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language | eng |
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title | Accurate Extraction of Excess Channel Thermal Noise Coefficient in Berkeley Short-Channel Insulated Gate Field-Effect Transistor Model 4 |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T16%3A53%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Accurate%20Extraction%20of%20Excess%20Channel%20Thermal%20Noise%20Coefficient%20in%20Berkeley%20Short-Channel%20Insulated%20Gate%20Field-Effect%20Transistor%20Model%204&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Jeon,%20Jongwook&rft.date=2009-04-01&rft.volume=48&rft.issue=4S&rft.spage=4&rft.pages=4-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.48.04C037&rft_dat=%3Ccrossref%3E10_1143_JJAP_48_04C037%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |