GaN Growth on Si(111) Using Simultaneous AlN/α-Si 3 N 4 Buffer Structure

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Veröffentlicht in:Japanese Journal of Applied Physics 2008-07, Vol.47 (7R), p.5572
Hauptverfasser: Chang, Jet Rung, Yang, Tsung Hsi, Ku, Jui Tai, Shen, Shih Guo, Chen, Yi Cheng, Wong, Yuen Yee, Chang, Chun Yen
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container_title Japanese Journal of Applied Physics
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creator Chang, Jet Rung
Yang, Tsung Hsi
Ku, Jui Tai
Shen, Shih Guo
Chen, Yi Cheng
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Chang, Chun Yen
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doi_str_mv 10.1143/JJAP.47.5572
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title GaN Growth on Si(111) Using Simultaneous AlN/α-Si 3 N 4 Buffer Structure
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