Suppression of Metamorphoses of Metal/High-k Gate Stack by Low-Temperature, Cl-Free SiN Offset Spacer, and Its Impact on Scaled Metal–Oxide–Semiconductor Field-Effect Transistors

Suppression of Metamorphoses of Metal/High-k Gate Stack by Low-Temperature, Cl-Free SiN Offset Spacer, and Its Impact on Scaled Metal–Oxide–Semiconductor Field-Effect Transistors

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Veröffentlicht in:Japanese Journal of Applied Physics 2008-04, Vol.47 (4S), p.2375
Hauptverfasser: Mise, Nobuyuki, Matsuki, Takeo, Watanabe, Toshinari, Morooka, Tetsu, Eimori, Takahisa, Nara, Yasuo
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container_title Japanese Journal of Applied Physics
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creator Mise, Nobuyuki
Matsuki, Takeo
Watanabe, Toshinari
Morooka, Tetsu
Eimori, Takahisa
Nara, Yasuo
description
doi_str_mv 10.1143/JJAP.47.2375
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title Suppression of Metamorphoses of Metal/High-k Gate Stack by Low-Temperature, Cl-Free SiN Offset Spacer, and Its Impact on Scaled Metal–Oxide–Semiconductor Field-Effect Transistors
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