Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 2008-04, Vol.47 (4S), p.2345 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 4S |
| container_start_page | 2345 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 47 |
| creator | Tai, Kaori Yamaguchi, Shinpei Tanaka, Kazuki Hirano, Tomoyuki Oshiyama, Itaru Kazi, Salam Ando, Takashi Nakata, Masashi Yamanaka, Mayumi Yamamoto, Ryo Kanda, Sayuri Tateshita, Yasushi Wakabayashi, Hitoshi Tagawa, Yukio Tukamoto, Masanori Iwamoto, Hayato Saito, Masaki Nagashima, Naoki Kadomura, Shingo |
| description | |
| doi_str_mv | 10.1143/JJAP.47.2345 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_47_2345</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_47_2345</sourcerecordid><originalsourceid>FETCH-LOGICAL-c326t-8979e38a6f05b1577a03bc07a5fc6e3cec878da1dd913abeff4b110d8c7e1a893</originalsourceid><addsrcrecordid>eNotkEFOwzAURC0EEqWw4wA-ACl27MTJsioUqFqK1MA2cpyfxiiJi-0guuMOXIGTcRIawWo0i3kaPYQuKZlQytn1YjF9mnAxCRmPjtCIMi4CTuLoGI0ICWnA0zA8RWfOvR5qHHE6Qt9ZbcHVpinxi2m83AJembJvpNemwxmoutNvPeDe6W6L501vrO4AZxakb6Hz2NfW9NsaT71ptcJLuQeLb2BnnP5D6Ee86bWXRQO4MhbPTLtrYNhKu8cr8LL5-fxaf-gSDrmBA8V0Za-8GTjvWoE7RyeVbBxc_OcYPc9vs9l9sFzfPcymy0CxMPZBkooUWCLjikQFjYSQhBWKCBlVKgamQCUiKSUty5QyWUBV8YJSUiZKAJVJysbo6o-rrHHOQpXvrG4PN3NK8sFwPhjOucgHw-wXVrx1yw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Tai, Kaori ; Yamaguchi, Shinpei ; Tanaka, Kazuki ; Hirano, Tomoyuki ; Oshiyama, Itaru ; Kazi, Salam ; Ando, Takashi ; Nakata, Masashi ; Yamanaka, Mayumi ; Yamamoto, Ryo ; Kanda, Sayuri ; Tateshita, Yasushi ; Wakabayashi, Hitoshi ; Tagawa, Yukio ; Tukamoto, Masanori ; Iwamoto, Hayato ; Saito, Masaki ; Nagashima, Naoki ; Kadomura, Shingo</creator><creatorcontrib>Tai, Kaori ; Yamaguchi, Shinpei ; Tanaka, Kazuki ; Hirano, Tomoyuki ; Oshiyama, Itaru ; Kazi, Salam ; Ando, Takashi ; Nakata, Masashi ; Yamanaka, Mayumi ; Yamamoto, Ryo ; Kanda, Sayuri ; Tateshita, Yasushi ; Wakabayashi, Hitoshi ; Tagawa, Yukio ; Tukamoto, Masanori ; Iwamoto, Hayato ; Saito, Masaki ; Nagashima, Naoki ; Kadomura, Shingo</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.47.2345</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.2345</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c326t-8979e38a6f05b1577a03bc07a5fc6e3cec878da1dd913abeff4b110d8c7e1a893</citedby><cites>FETCH-LOGICAL-c326t-8979e38a6f05b1577a03bc07a5fc6e3cec878da1dd913abeff4b110d8c7e1a893</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Tai, Kaori</creatorcontrib><creatorcontrib>Yamaguchi, Shinpei</creatorcontrib><creatorcontrib>Tanaka, Kazuki</creatorcontrib><creatorcontrib>Hirano, Tomoyuki</creatorcontrib><creatorcontrib>Oshiyama, Itaru</creatorcontrib><creatorcontrib>Kazi, Salam</creatorcontrib><creatorcontrib>Ando, Takashi</creatorcontrib><creatorcontrib>Nakata, Masashi</creatorcontrib><creatorcontrib>Yamanaka, Mayumi</creatorcontrib><creatorcontrib>Yamamoto, Ryo</creatorcontrib><creatorcontrib>Kanda, Sayuri</creatorcontrib><creatorcontrib>Tateshita, Yasushi</creatorcontrib><creatorcontrib>Wakabayashi, Hitoshi</creatorcontrib><creatorcontrib>Tagawa, Yukio</creatorcontrib><creatorcontrib>Tukamoto, Masanori</creatorcontrib><creatorcontrib>Iwamoto, Hayato</creatorcontrib><creatorcontrib>Saito, Masaki</creatorcontrib><creatorcontrib>Nagashima, Naoki</creatorcontrib><creatorcontrib>Kadomura, Shingo</creatorcontrib><title>Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotkEFOwzAURC0EEqWw4wA-ACl27MTJsioUqFqK1MA2cpyfxiiJi-0guuMOXIGTcRIawWo0i3kaPYQuKZlQytn1YjF9mnAxCRmPjtCIMi4CTuLoGI0ICWnA0zA8RWfOvR5qHHE6Qt9ZbcHVpinxi2m83AJembJvpNemwxmoutNvPeDe6W6L501vrO4AZxakb6Hz2NfW9NsaT71ptcJLuQeLb2BnnP5D6Ee86bWXRQO4MhbPTLtrYNhKu8cr8LL5-fxaf-gSDrmBA8V0Za-8GTjvWoE7RyeVbBxc_OcYPc9vs9l9sFzfPcymy0CxMPZBkooUWCLjikQFjYSQhBWKCBlVKgamQCUiKSUty5QyWUBV8YJSUiZKAJVJysbo6o-rrHHOQpXvrG4PN3NK8sFwPhjOucgHw-wXVrx1yw</recordid><startdate>20080401</startdate><enddate>20080401</enddate><creator>Tai, Kaori</creator><creator>Yamaguchi, Shinpei</creator><creator>Tanaka, Kazuki</creator><creator>Hirano, Tomoyuki</creator><creator>Oshiyama, Itaru</creator><creator>Kazi, Salam</creator><creator>Ando, Takashi</creator><creator>Nakata, Masashi</creator><creator>Yamanaka, Mayumi</creator><creator>Yamamoto, Ryo</creator><creator>Kanda, Sayuri</creator><creator>Tateshita, Yasushi</creator><creator>Wakabayashi, Hitoshi</creator><creator>Tagawa, Yukio</creator><creator>Tukamoto, Masanori</creator><creator>Iwamoto, Hayato</creator><creator>Saito, Masaki</creator><creator>Nagashima, Naoki</creator><creator>Kadomura, Shingo</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080401</creationdate><title>Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices</title><author>Tai, Kaori ; Yamaguchi, Shinpei ; Tanaka, Kazuki ; Hirano, Tomoyuki ; Oshiyama, Itaru ; Kazi, Salam ; Ando, Takashi ; Nakata, Masashi ; Yamanaka, Mayumi ; Yamamoto, Ryo ; Kanda, Sayuri ; Tateshita, Yasushi ; Wakabayashi, Hitoshi ; Tagawa, Yukio ; Tukamoto, Masanori ; Iwamoto, Hayato ; Saito, Masaki ; Nagashima, Naoki ; Kadomura, Shingo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c326t-8979e38a6f05b1577a03bc07a5fc6e3cec878da1dd913abeff4b110d8c7e1a893</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tai, Kaori</creatorcontrib><creatorcontrib>Yamaguchi, Shinpei</creatorcontrib><creatorcontrib>Tanaka, Kazuki</creatorcontrib><creatorcontrib>Hirano, Tomoyuki</creatorcontrib><creatorcontrib>Oshiyama, Itaru</creatorcontrib><creatorcontrib>Kazi, Salam</creatorcontrib><creatorcontrib>Ando, Takashi</creatorcontrib><creatorcontrib>Nakata, Masashi</creatorcontrib><creatorcontrib>Yamanaka, Mayumi</creatorcontrib><creatorcontrib>Yamamoto, Ryo</creatorcontrib><creatorcontrib>Kanda, Sayuri</creatorcontrib><creatorcontrib>Tateshita, Yasushi</creatorcontrib><creatorcontrib>Wakabayashi, Hitoshi</creatorcontrib><creatorcontrib>Tagawa, Yukio</creatorcontrib><creatorcontrib>Tukamoto, Masanori</creatorcontrib><creatorcontrib>Iwamoto, Hayato</creatorcontrib><creatorcontrib>Saito, Masaki</creatorcontrib><creatorcontrib>Nagashima, Naoki</creatorcontrib><creatorcontrib>Kadomura, Shingo</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tai, Kaori</au><au>Yamaguchi, Shinpei</au><au>Tanaka, Kazuki</au><au>Hirano, Tomoyuki</au><au>Oshiyama, Itaru</au><au>Kazi, Salam</au><au>Ando, Takashi</au><au>Nakata, Masashi</au><au>Yamanaka, Mayumi</au><au>Yamamoto, Ryo</au><au>Kanda, Sayuri</au><au>Tateshita, Yasushi</au><au>Wakabayashi, Hitoshi</au><au>Tagawa, Yukio</au><au>Tukamoto, Masanori</au><au>Iwamoto, Hayato</au><au>Saito, Masaki</au><au>Nagashima, Naoki</au><au>Kadomura, Shingo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2008-04-01</date><risdate>2008</risdate><volume>47</volume><issue>4S</issue><spage>2345</spage><pages>2345-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.1143/JJAP.47.2345</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.2345 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_47_2345 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T13%3A44%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Threshold%20Voltage%20Modulation%20Technique%20using%20Fluorine%20Treatment%20through%20Atomic%20Layer%20Deposition%20TiN%20Suitable%20for%20Complementary%20Metal%E2%80%93Oxide%E2%80%93Semiconductor%20Devices&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Tai,%20Kaori&rft.date=2008-04-01&rft.volume=47&rft.issue=4S&rft.spage=2345&rft.pages=2345-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.47.2345&rft_dat=%3Ccrossref%3E10_1143_JJAP_47_2345%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |