High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 µs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition

High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 µs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition

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Veröffentlicht in:Japanese Journal of Applied Physics 2007-11, Vol.46 (11R), p.7198
Hauptverfasser: Ohdaira, Keisuke, Nishizaki, Shogo, Endo, Yohei, Fujiwara, Tomoko, Usami, Noritaka, Nakajima, Kazuo, Matsumura, Hideki
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container_issue 11R
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container_title Japanese Journal of Applied Physics
container_volume 46
creator Ohdaira, Keisuke
Nishizaki, Shogo
Endo, Yohei
Fujiwara, Tomoko
Usami, Noritaka
Nakajima, Kazuo
Matsumura, Hideki
description
doi_str_mv 10.1143/JJAP.46.7198
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title High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 µs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
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