Technology of Ferroelectric Thin-Film Formation with Large Coercive Field on Amorphous SiO 2 by Ion-Bombardment-Assisted Sputtering and Oxygen Radical Treatment for Future Scaling Down of Ferroelectric Gate Field-Effect Transistor Memory Device

Technology of Ferroelectric Thin-Film Formation with Large Coercive Field on Amorphous SiO 2 by Ion-Bombardment-Assisted Sputtering and Oxygen Radical Treatment for Future Scaling Down of Ferroelectric Gate Field-Effect Transistor Memory Device

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Veröffentlicht in:Japanese Journal of Applied Physics 2007-04, Vol.46 (4S), p.2205
Hauptverfasser: Takahashi, Ichirou, Hirayama, Masaki, Sugawa, Shigetoshi, Ohmi, Tadahiro
Format: Artikel
Sprache:eng
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.46.2205