Hot-Carrier Degradation and Electric Field and Electron Concentration near Drain Junction in Low-Temperature N-Channel Single Drain and Lightly Doped Drain Polycrystalline Silicon Thin Film Transistors

Hot-Carrier Degradation and Electric Field and Electron Concentration near Drain Junction in Low-Temperature N-Channel Single Drain and Lightly Doped Drain Polycrystalline Silicon Thin Film Transistors

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Veröffentlicht in:Japanese Journal of Applied Physics 2007-03, Vol.46 (3S), p.1322
Hauptverfasser: Usami, Gen, Nogami, Yukisato, Yajima, Toshihisa, Yamagata, Masahiro, Satoh, Toshifumi, Tango, Hiroyuki
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container_issue 3S
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container_title Japanese Journal of Applied Physics
container_volume 46
creator Usami, Gen
Nogami, Yukisato
Yajima, Toshihisa
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Satoh, Toshifumi
Tango, Hiroyuki
description
doi_str_mv 10.1143/JJAP.46.1322
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title Hot-Carrier Degradation and Electric Field and Electron Concentration near Drain Junction in Low-Temperature N-Channel Single Drain and Lightly Doped Drain Polycrystalline Silicon Thin Film Transistors
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