All-Monolithic 1.55 µm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition

All-Monolithic 1.55 µm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition

We successfully demonstrate all-monolithic InAlGaAs/InP vertical cavity surface emitting lasers (VCSELs) grown by metal organic chemical vapor deposition (MOCVD) in the wavelength range of 1.55 µm. The devices showed the high performances such as single mode output power of 1.6 mW, side mode suppres...

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Veröffentlicht in:Japanese Journal of Applied Physics 2006-01, Vol.45 (1L), p.L8
Hauptverfasser: Park, Mi-Ran, Kwon, O-Kyun, Han, Won-Seok, Lee, Ki-Hwang, Park, Seong-Joo, Yoo, Byueng-Su
Format: Artikel
Sprache:eng ; jpn
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Zusammenfassung:We successfully demonstrate all-monolithic InAlGaAs/InP vertical cavity surface emitting lasers (VCSELs) grown by metal organic chemical vapor deposition (MOCVD) in the wavelength range of 1.55 µm. The devices showed the high performances such as single mode output power of 1.6 mW, side mode suppression ratio (SMSR) of 60 dB, divergence angle of 8°, the slope efficiency of 0.27 W/A, and the continuous wave (CW) operation of temperature over 80°C. We achieved the modulation bandwidth exceeding 2.5 Gbps and power penalty free transmission over 30 km.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.45.L8