Structure, Materials and Shape Optimization of Magnetic Tunnel Junction Devices: Spin-Transfer Switching Current Reduction for Future Magnetoresistive Random Access Memory Application

Structure, Materials and Shape Optimization of Magnetic Tunnel Junction Devices: Spin-Transfer Switching Current Reduction for Future Magnetoresistive Random Access Memory Application

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Veröffentlicht in:Japanese Journal of Applied Physics 2006-05, Vol.45 (5R), p.3835
Hauptverfasser: Huai, Yiming, Apalkov, Dmytro, Diao, Zhitao, Ding, Yunfei, Panchula, Alex, Pakala, Mahendra, Wang, Lien-Chang, Chen, Eugene
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container_title Japanese Journal of Applied Physics
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creator Huai, Yiming
Apalkov, Dmytro
Diao, Zhitao
Ding, Yunfei
Panchula, Alex
Pakala, Mahendra
Wang, Lien-Chang
Chen, Eugene
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doi_str_mv 10.1143/JJAP.45.3835
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title Structure, Materials and Shape Optimization of Magnetic Tunnel Junction Devices: Spin-Transfer Switching Current Reduction for Future Magnetoresistive Random Access Memory Application
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