Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High-k Gate Metal–Insulator–Semiconductor Field-Effect Transistors with NiSi Source/Drain

Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High-k Gate Metal–Insulator–Semiconductor Field-Effect Transistors with NiSi Source/Drain

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2006-04, Vol.45 (4S), p.2939
Hauptverfasser: Matsuki, Takeo, Nishimura, Isamu, Akasaka, Yasushi, Hayashi, Kiyoshi, Noguchi, Masataka, Yamashita, Koji, Torii, Kazuyoshi, Kasai, Naoki, Nara, Yasuo
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 4S
container_start_page 2939
container_title Japanese Journal of Applied Physics
container_volume 45
creator Matsuki, Takeo
Nishimura, Isamu
Akasaka, Yasushi
Hayashi, Kiyoshi
Noguchi, Masataka
Yamashita, Koji
Torii, Kazuyoshi
Kasai, Naoki
Nara, Yasuo
description
doi_str_mv 10.1143/JJAP.45.2939
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_45_2939</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_45_2939</sourcerecordid><originalsourceid>FETCH-LOGICAL-c192t-c6b33324068fbb0507124438bca586913c1374b6441042746d699d35c917ddb93</originalsourceid><addsrcrecordid>eNotkU1OwzAQRi0EEuVnxwF8ANzGsZPUywhoCyoQKWUdOc6kMaR2ZbsgdtyBM3ERTkKqspp532JmNA-hKxqNKeVs8vCQF2OejGPBxBEaUcYzwqM0OUajKIop4SKOT9GZ968DpgmnI_STO5CkhB5U0O-AC-sDuYWt9Tpoa3BuDMhemzUunFXgPX7xe5r10nd4KTdbLE2DS42LzgYLBtz6E-e1t64Gh1vr8CME2U8Wet2RNzyXAQ7J79f3vfG7Xgbrhr6EjVbWNDs1MJ5p6Bty17bDWXjlpPHaD7nHHzp0-EkP-0q7cwomt05qc4FOWtl7uPyv5-hldre6WZDl8_z-Jl8SRUUciEprxlg8vGTa1nWURBmNOWfTWslkmgrKFGUZr1POacTjjKdNKkTDEiVo1jS1YOfo-jBXOeu9g7baOr2R7rOiUbVXUO0VVDyp9grYH5FfffQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High-k Gate Metal–Insulator–Semiconductor Field-Effect Transistors with NiSi Source/Drain</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Matsuki, Takeo ; Nishimura, Isamu ; Akasaka, Yasushi ; Hayashi, Kiyoshi ; Noguchi, Masataka ; Yamashita, Koji ; Torii, Kazuyoshi ; Kasai, Naoki ; Nara, Yasuo</creator><creatorcontrib>Matsuki, Takeo ; Nishimura, Isamu ; Akasaka, Yasushi ; Hayashi, Kiyoshi ; Noguchi, Masataka ; Yamashita, Koji ; Torii, Kazuyoshi ; Kasai, Naoki ; Nara, Yasuo</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.45.2939</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.2939</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c192t-c6b33324068fbb0507124438bca586913c1374b6441042746d699d35c917ddb93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Matsuki, Takeo</creatorcontrib><creatorcontrib>Nishimura, Isamu</creatorcontrib><creatorcontrib>Akasaka, Yasushi</creatorcontrib><creatorcontrib>Hayashi, Kiyoshi</creatorcontrib><creatorcontrib>Noguchi, Masataka</creatorcontrib><creatorcontrib>Yamashita, Koji</creatorcontrib><creatorcontrib>Torii, Kazuyoshi</creatorcontrib><creatorcontrib>Kasai, Naoki</creatorcontrib><creatorcontrib>Nara, Yasuo</creatorcontrib><title>Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High-k Gate Metal–Insulator–Semiconductor Field-Effect Transistors with NiSi Source/Drain</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNotkU1OwzAQRi0EEuVnxwF8ANzGsZPUywhoCyoQKWUdOc6kMaR2ZbsgdtyBM3ERTkKqspp532JmNA-hKxqNKeVs8vCQF2OejGPBxBEaUcYzwqM0OUajKIop4SKOT9GZ968DpgmnI_STO5CkhB5U0O-AC-sDuYWt9Tpoa3BuDMhemzUunFXgPX7xe5r10nd4KTdbLE2DS42LzgYLBtz6E-e1t64Gh1vr8CME2U8Wet2RNzyXAQ7J79f3vfG7Xgbrhr6EjVbWNDs1MJ5p6Bty17bDWXjlpPHaD7nHHzp0-EkP-0q7cwomt05qc4FOWtl7uPyv5-hldre6WZDl8_z-Jl8SRUUciEprxlg8vGTa1nWURBmNOWfTWslkmgrKFGUZr1POacTjjKdNKkTDEiVo1jS1YOfo-jBXOeu9g7baOr2R7rOiUbVXUO0VVDyp9grYH5FfffQ</recordid><startdate>20060401</startdate><enddate>20060401</enddate><creator>Matsuki, Takeo</creator><creator>Nishimura, Isamu</creator><creator>Akasaka, Yasushi</creator><creator>Hayashi, Kiyoshi</creator><creator>Noguchi, Masataka</creator><creator>Yamashita, Koji</creator><creator>Torii, Kazuyoshi</creator><creator>Kasai, Naoki</creator><creator>Nara, Yasuo</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20060401</creationdate><title>Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High-k Gate Metal–Insulator–Semiconductor Field-Effect Transistors with NiSi Source/Drain</title><author>Matsuki, Takeo ; Nishimura, Isamu ; Akasaka, Yasushi ; Hayashi, Kiyoshi ; Noguchi, Masataka ; Yamashita, Koji ; Torii, Kazuyoshi ; Kasai, Naoki ; Nara, Yasuo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c192t-c6b33324068fbb0507124438bca586913c1374b6441042746d699d35c917ddb93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Matsuki, Takeo</creatorcontrib><creatorcontrib>Nishimura, Isamu</creatorcontrib><creatorcontrib>Akasaka, Yasushi</creatorcontrib><creatorcontrib>Hayashi, Kiyoshi</creatorcontrib><creatorcontrib>Noguchi, Masataka</creatorcontrib><creatorcontrib>Yamashita, Koji</creatorcontrib><creatorcontrib>Torii, Kazuyoshi</creatorcontrib><creatorcontrib>Kasai, Naoki</creatorcontrib><creatorcontrib>Nara, Yasuo</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Matsuki, Takeo</au><au>Nishimura, Isamu</au><au>Akasaka, Yasushi</au><au>Hayashi, Kiyoshi</au><au>Noguchi, Masataka</au><au>Yamashita, Koji</au><au>Torii, Kazuyoshi</au><au>Kasai, Naoki</au><au>Nara, Yasuo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High-k Gate Metal–Insulator–Semiconductor Field-Effect Transistors with NiSi Source/Drain</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2006-04-01</date><risdate>2006</risdate><volume>45</volume><issue>4S</issue><spage>2939</spage><pages>2939-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.1143/JJAP.45.2939</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.2939
issn 0021-4922
1347-4065
language eng
recordid cdi_crossref_primary_10_1143_JJAP_45_2939
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High-k Gate Metal–Insulator–Semiconductor Field-Effect Transistors with NiSi Source/Drain
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T20%3A40%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Area-Selective%20Post-Deposition%20Annealing%20Process%20Using%20Flash%20Lamp%20and%20Si%20Photoenergy%20Absorber%20for%20Metal/High-k%20Gate%20Metal%E2%80%93Insulator%E2%80%93Semiconductor%20Field-Effect%20Transistors%20with%20NiSi%20Source/Drain&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Matsuki,%20Takeo&rft.date=2006-04-01&rft.volume=45&rft.issue=4S&rft.spage=2939&rft.pages=2939-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.45.2939&rft_dat=%3Ccrossref%3E10_1143_JJAP_45_2939%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true