Photoelectrochemical Properties of p-Type GaN in Comparison with n-Type GaN

Photoelectrochemical Properties of p-Type GaN in Comparison with n-Type GaN

We studied the photoelectrochemical properties of p-type GaN compared with those of n-type GaN. Band-edge potentials of p-type GaN were determined from the Mott–Schottky plot, and we clarified the potentials to be identical to those of n-type GaN. Photocurrent in p-type GaN shows its potential as an...

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Veröffentlicht in:Japanese Journal of Applied Physics 2005-01, Vol.44 (7L), p.L909
Hauptverfasser: Fujii, Katsushi, Ohkawa, Kazuhiro
Format: Artikel
Sprache:eng
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Zusammenfassung:We studied the photoelectrochemical properties of p-type GaN compared with those of n-type GaN. Band-edge potentials of p-type GaN were determined from the Mott–Schottky plot, and we clarified the potentials to be identical to those of n-type GaN. Photocurrent in p-type GaN shows its potential as an electrode for photoelectrolysis of water.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.L909