Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements

Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-As 2 Se 3 ) were carried out. Samples where annealed from 333–358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2005-01, Vol.44 (2L), p.L334
Hauptverfasser: Saito, Ichitaro, Oonuki, Kousuke, Yamada, Takatoshi, Aono, Masami, Butler, Tim, Rupesinghe, Nalin L., Amaratunga, Gehan A. J., Milne, William I., Okano, Ken
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 2L
container_start_page L334
container_title Japanese Journal of Applied Physics
container_volume 44
creator Saito, Ichitaro
Oonuki, Kousuke
Yamada, Takatoshi
Aono, Masami
Butler, Tim
Rupesinghe, Nalin L.
Amaratunga, Gehan A. J.
Milne, William I.
Okano, Ken
description Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-As 2 Se 3 ) were carried out. Samples where annealed from 333–358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently for a-Se and the photoconductivity ratio increased drastically after 338 K, but drops after further annealing. Amorphous-As 2 Se 3 however, has no noticeable change in the dark current neither in the photoconductivity ratio. Arsenic is introduced into a-Se to prevent degradation, which causes loss of image quality, but the volume must be controlled in order to maintain high photoconductivity.
doi_str_mv 10.1143/JJAP.44.L334
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_44_L334</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_44_L334</sourcerecordid><originalsourceid>FETCH-LOGICAL-c383t-6e0f6b72d536b67585fee05d9a6723ae42f8e2c3ff5395011636365a687f22173</originalsourceid><addsrcrecordid>eNotkF1LwzAYhYMoOKd3_oD8ADuTvEnaXZb5tVFxoF7XtH3jKmszklSov94V5VwcDhyei4eQa84WnEu43Wzy7ULKRQEgT8iMg0wTybQ6JTPGBE_kUohzchHC13FqJfmMfOR9j2afrPtmqLGhd_jpTWNi63rqLM075w87NwT6invs26Gjq53xpo7o25_jvxrpdueiq90EiO13G0f6jCYMHjvsY7gkZ9bsA17995y8P9y_rZ6S4uVxvcqLpIYMYqKRWV2lolGgK52qTFlEppql0akAg1LYDEUN1ipYKsa5hmOU0VlqheApzMnNH7f2LgSPtjz4tjN-LDkrJzvlZKeUspzswC90m1kB</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Saito, Ichitaro ; Oonuki, Kousuke ; Yamada, Takatoshi ; Aono, Masami ; Butler, Tim ; Rupesinghe, Nalin L. ; Amaratunga, Gehan A. J. ; Milne, William I. ; Okano, Ken</creator><creatorcontrib>Saito, Ichitaro ; Oonuki, Kousuke ; Yamada, Takatoshi ; Aono, Masami ; Butler, Tim ; Rupesinghe, Nalin L. ; Amaratunga, Gehan A. J. ; Milne, William I. ; Okano, Ken</creatorcontrib><description>Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-As 2 Se 3 ) were carried out. Samples where annealed from 333–358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently for a-Se and the photoconductivity ratio increased drastically after 338 K, but drops after further annealing. Amorphous-As 2 Se 3 however, has no noticeable change in the dark current neither in the photoconductivity ratio. Arsenic is introduced into a-Se to prevent degradation, which causes loss of image quality, but the volume must be controlled in order to maintain high photoconductivity.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.44.L334</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2005-01, Vol.44 (2L), p.L334</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-6e0f6b72d536b67585fee05d9a6723ae42f8e2c3ff5395011636365a687f22173</citedby><cites>FETCH-LOGICAL-c383t-6e0f6b72d536b67585fee05d9a6723ae42f8e2c3ff5395011636365a687f22173</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Saito, Ichitaro</creatorcontrib><creatorcontrib>Oonuki, Kousuke</creatorcontrib><creatorcontrib>Yamada, Takatoshi</creatorcontrib><creatorcontrib>Aono, Masami</creatorcontrib><creatorcontrib>Butler, Tim</creatorcontrib><creatorcontrib>Rupesinghe, Nalin L.</creatorcontrib><creatorcontrib>Amaratunga, Gehan A. J.</creatorcontrib><creatorcontrib>Milne, William I.</creatorcontrib><creatorcontrib>Okano, Ken</creatorcontrib><title>Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements</title><title>Japanese Journal of Applied Physics</title><description>Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-As 2 Se 3 ) were carried out. Samples where annealed from 333–358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently for a-Se and the photoconductivity ratio increased drastically after 338 K, but drops after further annealing. Amorphous-As 2 Se 3 however, has no noticeable change in the dark current neither in the photoconductivity ratio. Arsenic is introduced into a-Se to prevent degradation, which causes loss of image quality, but the volume must be controlled in order to maintain high photoconductivity.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNotkF1LwzAYhYMoOKd3_oD8ADuTvEnaXZb5tVFxoF7XtH3jKmszklSov94V5VwcDhyei4eQa84WnEu43Wzy7ULKRQEgT8iMg0wTybQ6JTPGBE_kUohzchHC13FqJfmMfOR9j2afrPtmqLGhd_jpTWNi63rqLM075w87NwT6invs26Gjq53xpo7o25_jvxrpdueiq90EiO13G0f6jCYMHjvsY7gkZ9bsA17995y8P9y_rZ6S4uVxvcqLpIYMYqKRWV2lolGgK52qTFlEppql0akAg1LYDEUN1ipYKsa5hmOU0VlqheApzMnNH7f2LgSPtjz4tjN-LDkrJzvlZKeUspzswC90m1kB</recordid><startdate>20050101</startdate><enddate>20050101</enddate><creator>Saito, Ichitaro</creator><creator>Oonuki, Kousuke</creator><creator>Yamada, Takatoshi</creator><creator>Aono, Masami</creator><creator>Butler, Tim</creator><creator>Rupesinghe, Nalin L.</creator><creator>Amaratunga, Gehan A. J.</creator><creator>Milne, William I.</creator><creator>Okano, Ken</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050101</creationdate><title>Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements</title><author>Saito, Ichitaro ; Oonuki, Kousuke ; Yamada, Takatoshi ; Aono, Masami ; Butler, Tim ; Rupesinghe, Nalin L. ; Amaratunga, Gehan A. J. ; Milne, William I. ; Okano, Ken</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-6e0f6b72d536b67585fee05d9a6723ae42f8e2c3ff5395011636365a687f22173</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Saito, Ichitaro</creatorcontrib><creatorcontrib>Oonuki, Kousuke</creatorcontrib><creatorcontrib>Yamada, Takatoshi</creatorcontrib><creatorcontrib>Aono, Masami</creatorcontrib><creatorcontrib>Butler, Tim</creatorcontrib><creatorcontrib>Rupesinghe, Nalin L.</creatorcontrib><creatorcontrib>Amaratunga, Gehan A. J.</creatorcontrib><creatorcontrib>Milne, William I.</creatorcontrib><creatorcontrib>Okano, Ken</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Saito, Ichitaro</au><au>Oonuki, Kousuke</au><au>Yamada, Takatoshi</au><au>Aono, Masami</au><au>Butler, Tim</au><au>Rupesinghe, Nalin L.</au><au>Amaratunga, Gehan A. J.</au><au>Milne, William I.</au><au>Okano, Ken</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2005-01-01</date><risdate>2005</risdate><volume>44</volume><issue>2L</issue><spage>L334</spage><pages>L334-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-As 2 Se 3 ) were carried out. Samples where annealed from 333–358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently for a-Se and the photoconductivity ratio increased drastically after 338 K, but drops after further annealing. Amorphous-As 2 Se 3 however, has no noticeable change in the dark current neither in the photoconductivity ratio. Arsenic is introduced into a-Se to prevent degradation, which causes loss of image quality, but the volume must be controlled in order to maintain high photoconductivity.</abstract><doi>10.1143/JJAP.44.L334</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 2005-01, Vol.44 (2L), p.L334
issn 0021-4922
1347-4065
language eng
recordid cdi_crossref_primary_10_1143_JJAP_44_L334
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T09%3A53%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Anneal-Induced%20Degradation%20of%20Amorphous%20Selenium%20Characterized%20by%20Photoconductivity%20Measurements&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Saito,%20Ichitaro&rft.date=2005-01-01&rft.volume=44&rft.issue=2L&rft.spage=L334&rft.pages=L334-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.44.L334&rft_dat=%3Ccrossref%3E10_1143_JJAP_44_L334%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true