Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements
Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-As 2 Se 3 ) were carried out. Samples where annealed from 333–358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2005-01, Vol.44 (2L), p.L334 |
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container_start_page | L334 |
container_title | Japanese Journal of Applied Physics |
container_volume | 44 |
creator | Saito, Ichitaro Oonuki, Kousuke Yamada, Takatoshi Aono, Masami Butler, Tim Rupesinghe, Nalin L. Amaratunga, Gehan A. J. Milne, William I. Okano, Ken |
description | Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-As
2
Se
3
) were carried out. Samples where annealed from 333–358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently for a-Se and the photoconductivity ratio increased drastically after 338 K, but drops after further annealing. Amorphous-As
2
Se
3
however, has no noticeable change in the dark current neither in the photoconductivity ratio. Arsenic is introduced into a-Se to prevent degradation, which causes loss of image quality, but the volume must be controlled in order to maintain high photoconductivity. |
doi_str_mv | 10.1143/JJAP.44.L334 |
format | Article |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_44_L334</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_44_L334</sourcerecordid><originalsourceid>FETCH-LOGICAL-c383t-6e0f6b72d536b67585fee05d9a6723ae42f8e2c3ff5395011636365a687f22173</originalsourceid><addsrcrecordid>eNotkF1LwzAYhYMoOKd3_oD8ADuTvEnaXZb5tVFxoF7XtH3jKmszklSov94V5VwcDhyei4eQa84WnEu43Wzy7ULKRQEgT8iMg0wTybQ6JTPGBE_kUohzchHC13FqJfmMfOR9j2afrPtmqLGhd_jpTWNi63rqLM075w87NwT6invs26Gjq53xpo7o25_jvxrpdueiq90EiO13G0f6jCYMHjvsY7gkZ9bsA17995y8P9y_rZ6S4uVxvcqLpIYMYqKRWV2lolGgK52qTFlEppql0akAg1LYDEUN1ipYKsa5hmOU0VlqheApzMnNH7f2LgSPtjz4tjN-LDkrJzvlZKeUspzswC90m1kB</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Saito, Ichitaro ; Oonuki, Kousuke ; Yamada, Takatoshi ; Aono, Masami ; Butler, Tim ; Rupesinghe, Nalin L. ; Amaratunga, Gehan A. J. ; Milne, William I. ; Okano, Ken</creator><creatorcontrib>Saito, Ichitaro ; Oonuki, Kousuke ; Yamada, Takatoshi ; Aono, Masami ; Butler, Tim ; Rupesinghe, Nalin L. ; Amaratunga, Gehan A. J. ; Milne, William I. ; Okano, Ken</creatorcontrib><description>Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-As
2
Se
3
) were carried out. Samples where annealed from 333–358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently for a-Se and the photoconductivity ratio increased drastically after 338 K, but drops after further annealing. Amorphous-As
2
Se
3
however, has no noticeable change in the dark current neither in the photoconductivity ratio. Arsenic is introduced into a-Se to prevent degradation, which causes loss of image quality, but the volume must be controlled in order to maintain high photoconductivity.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.44.L334</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2005-01, Vol.44 (2L), p.L334</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-6e0f6b72d536b67585fee05d9a6723ae42f8e2c3ff5395011636365a687f22173</citedby><cites>FETCH-LOGICAL-c383t-6e0f6b72d536b67585fee05d9a6723ae42f8e2c3ff5395011636365a687f22173</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Saito, Ichitaro</creatorcontrib><creatorcontrib>Oonuki, Kousuke</creatorcontrib><creatorcontrib>Yamada, Takatoshi</creatorcontrib><creatorcontrib>Aono, Masami</creatorcontrib><creatorcontrib>Butler, Tim</creatorcontrib><creatorcontrib>Rupesinghe, Nalin L.</creatorcontrib><creatorcontrib>Amaratunga, Gehan A. J.</creatorcontrib><creatorcontrib>Milne, William I.</creatorcontrib><creatorcontrib>Okano, Ken</creatorcontrib><title>Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements</title><title>Japanese Journal of Applied Physics</title><description>Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-As
2
Se
3
) were carried out. Samples where annealed from 333–358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently for a-Se and the photoconductivity ratio increased drastically after 338 K, but drops after further annealing. Amorphous-As
2
Se
3
however, has no noticeable change in the dark current neither in the photoconductivity ratio. Arsenic is introduced into a-Se to prevent degradation, which causes loss of image quality, but the volume must be controlled in order to maintain high photoconductivity.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNotkF1LwzAYhYMoOKd3_oD8ADuTvEnaXZb5tVFxoF7XtH3jKmszklSov94V5VwcDhyei4eQa84WnEu43Wzy7ULKRQEgT8iMg0wTybQ6JTPGBE_kUohzchHC13FqJfmMfOR9j2afrPtmqLGhd_jpTWNi63rqLM075w87NwT6invs26Gjq53xpo7o25_jvxrpdueiq90EiO13G0f6jCYMHjvsY7gkZ9bsA17995y8P9y_rZ6S4uVxvcqLpIYMYqKRWV2lolGgK52qTFlEppql0akAg1LYDEUN1ipYKsa5hmOU0VlqheApzMnNH7f2LgSPtjz4tjN-LDkrJzvlZKeUspzswC90m1kB</recordid><startdate>20050101</startdate><enddate>20050101</enddate><creator>Saito, Ichitaro</creator><creator>Oonuki, Kousuke</creator><creator>Yamada, Takatoshi</creator><creator>Aono, Masami</creator><creator>Butler, Tim</creator><creator>Rupesinghe, Nalin L.</creator><creator>Amaratunga, Gehan A. J.</creator><creator>Milne, William I.</creator><creator>Okano, Ken</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050101</creationdate><title>Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements</title><author>Saito, Ichitaro ; Oonuki, Kousuke ; Yamada, Takatoshi ; Aono, Masami ; Butler, Tim ; Rupesinghe, Nalin L. ; Amaratunga, Gehan A. J. ; Milne, William I. ; Okano, Ken</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-6e0f6b72d536b67585fee05d9a6723ae42f8e2c3ff5395011636365a687f22173</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Saito, Ichitaro</creatorcontrib><creatorcontrib>Oonuki, Kousuke</creatorcontrib><creatorcontrib>Yamada, Takatoshi</creatorcontrib><creatorcontrib>Aono, Masami</creatorcontrib><creatorcontrib>Butler, Tim</creatorcontrib><creatorcontrib>Rupesinghe, Nalin L.</creatorcontrib><creatorcontrib>Amaratunga, Gehan A. J.</creatorcontrib><creatorcontrib>Milne, William I.</creatorcontrib><creatorcontrib>Okano, Ken</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Saito, Ichitaro</au><au>Oonuki, Kousuke</au><au>Yamada, Takatoshi</au><au>Aono, Masami</au><au>Butler, Tim</au><au>Rupesinghe, Nalin L.</au><au>Amaratunga, Gehan A. J.</au><au>Milne, William I.</au><au>Okano, Ken</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2005-01-01</date><risdate>2005</risdate><volume>44</volume><issue>2L</issue><spage>L334</spage><pages>L334-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-As
2
Se
3
) were carried out. Samples where annealed from 333–358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently for a-Se and the photoconductivity ratio increased drastically after 338 K, but drops after further annealing. Amorphous-As
2
Se
3
however, has no noticeable change in the dark current neither in the photoconductivity ratio. Arsenic is introduced into a-Se to prevent degradation, which causes loss of image quality, but the volume must be controlled in order to maintain high photoconductivity.</abstract><doi>10.1143/JJAP.44.L334</doi></addata></record> |
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title | Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements |
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