Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements
Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-As 2 Se 3 ) were carried out. Samples where annealed from 333–358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2005-01, Vol.44 (2L), p.L334 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-As
2
Se
3
) were carried out. Samples where annealed from 333–358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently for a-Se and the photoconductivity ratio increased drastically after 338 K, but drops after further annealing. Amorphous-As
2
Se
3
however, has no noticeable change in the dark current neither in the photoconductivity ratio. Arsenic is introduced into a-Se to prevent degradation, which causes loss of image quality, but the volume must be controlled in order to maintain high photoconductivity. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.44.L334 |