Etch Defect Reduction Using SF 6 /O 2 Plasma Cleaning and Optimizing Etching Recipe in Photo Resist Masked Gate Poly Silicon Etch Process

This paper presents a significantly effective new method to reduce defects generated during photo resist (PR) masked gate poly-silicon etch process in decoupled plasma source (DPS) etching reactor. In the new method, etching reactor cleaning by SF 6 /O 2 plasma before processing product wafers is in...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2005-07, Vol.44 (7R), p.4891
Hauptverfasser:	Mun, Seong Yeol, Shin, Kyeong Cheol, Lee, Sung Soo, Kwak, Jong Seok, Jeong, Jae Young, Jeong, Yang Hee
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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