Modeling of Degradation Effects on the High Frequency Noise of Metal–Oxide–Semiconductor Field-Effect Transistors

This paper proposes a hot-carrier stressed high-frequency noise model for metal–oxide–semiconductor field-effect transistors (MOSFETs). We first use the analytical method to develop a new fresh high-frequency noise model for MOSFETs, this model incorporates the effects of gate resistance, gate-induced current noise and non-local channel carrier heating, it can be used to calculate the minimum noise figure F min , optimized source admittance Y opt , and equivalent noise resistance R n and admittance G i . Secondly, we develop a new post-stress high-frequency noise model for MOSFETs, within this model the effects of hot-carrier stress induced interface states on the high-frequency noise performance can be evaluated. This model provides insightful device physics about the evolution of spatial noise sources within the channel versus stress time. The modeled results are in agreement with the experimental data of nMOSFETs with 0.25, 0.3 and 0.8-µm channel lengths.