An in-situ Fabrication and Characterization System Developed for High Performance Organic Semiconductor Devices

We have designed and set up a fabrication and characterization system for organic devices which enables us to assemble all components of devices and to characterize the device properties without breaking the vacuum. Using this system, top and bottom contact C 60 field effect transistors (FETs) were...

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Veröffentlicht in:Japanese Journal of Applied Physics 2005-06, Vol.44 (6R), p.3757
Hauptverfasser: Yamaguchi, Jun, Yaginuma, Seiichiro, Haemori, Masamitsu, Itaka, Kenji, Koinuma, Hideomi
Format: Artikel
Sprache:eng
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Zusammenfassung:We have designed and set up a fabrication and characterization system for organic devices which enables us to assemble all components of devices and to characterize the device properties without breaking the vacuum. Using this system, top and bottom contact C 60 field effect transistors (FETs) were fabricated and their performance was characterized. The top contact FET exhibited a mobility as high as 1.4 cm 2 /(V·s), which was higher than the bottom contact FET.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.3757