Organic Thin-Film Transistors with High Electron Mobility Based on Perfluoropentacene

We report on n-channel organic thin-film transistors (OTFTs) based on the novel n-type organic semiconductor, perfluoropentacene. The transistor exhibits excellent electrical characteristics, with a high electron mobility of 0.22 cm 2 /(V s) and a good current on/off ratio of 10 5 . The electron mob...

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Veröffentlicht in:Japanese Journal of Applied Physics 2005-06, Vol.44 (6R), p.3663
Hauptverfasser: Inoue, Youji, Sakamoto, Youichi, Suzuki, Toshiyasu, Kobayashi, Masafumi, Gao, Yuan, Tokito, Shizuo
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Sprache:eng
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Zusammenfassung:We report on n-channel organic thin-film transistors (OTFTs) based on the novel n-type organic semiconductor, perfluoropentacene. The transistor exhibits excellent electrical characteristics, with a high electron mobility of 0.22 cm 2 /(V s) and a good current on/off ratio of 10 5 . The electron mobility is comparable to the hole mobility of a pentacene OTFT. By combining the n-type perfluoropentacene and the p-type pentacene, we have fabricated ambipolar OTFTs and complementary inverter circuits. The OTFTs with heterostructures of the p- and n-type organic semiconductors can operate as an ambipolar device with high electron and hole mobilities of 0.042 and 0.041 cm 2 /(V s). The complementary inverter using an n-channel perfluoropentacene OTFT and a p-channel pentacene OTFT exhibits excellent transfer characteristics with a voltage gain of 45. A complementary inverter using the ambipolar OTFTs is also demonstrated.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.3663