Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
Nitride-based large size (i.e. 1 mm×1 mm) indium-tin-oxide (ITO) light emitting diodes (LEDs) were successfully fabricated. In order to enhance the output intensity of power chips, Al reflector was deposited by e-beam evaporator on the chip backside. It was found that the 350 mA output power was 84....
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2005-04, Vol.44 (4S), p.2462 |
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| container_issue | 4S |
| container_start_page | 2462 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 44 |
| creator | Chang, Chia-Sheng Chang, Shoou-Jinn Su, Yan-Kuin Chen, Wei-Shou Shen, Chien-Fu Shei, Shih-Chang Lo, Hsin-Ming |
| description | Nitride-based large size (i.e. 1 mm×1 mm) indium-tin-oxide (ITO) light emitting diodes (LEDs) were successfully fabricated. In order to enhance the output intensity of power chips, Al reflector was deposited by e-beam evaporator on the chip backside. It was found that the 350 mA output power was 84.8 mW (W-P-E=7.2%) at 460 nm for the power chip with ITO as p-contacts and Al as back-side reflector. It was also found that ITO power chip with Al reflector was more reliable. |
| doi_str_mv | 10.1143/JJAP.44.2462 |
| format | Article |
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In order to enhance the output intensity of power chips, Al reflector was deposited by e-beam evaporator on the chip backside. It was found that the 350 mA output power was 84.8 mW (W-P-E=7.2%) at 460 nm for the power chip with ITO as p-contacts and Al as back-side reflector. 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In order to enhance the output intensity of power chips, Al reflector was deposited by e-beam evaporator on the chip backside. It was found that the 350 mA output power was 84.8 mW (W-P-E=7.2%) at 460 nm for the power chip with ITO as p-contacts and Al as back-side reflector. It was also found that ITO power chip with Al reflector was more reliable.</abstract><doi>10.1143/JJAP.44.2462</doi></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2462 |
| issn | 0021-4922 1347-4065 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector |
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