Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector

Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector

Nitride-based large size (i.e. 1 mm×1 mm) indium-tin-oxide (ITO) light emitting diodes (LEDs) were successfully fabricated. In order to enhance the output intensity of power chips, Al reflector was deposited by e-beam evaporator on the chip backside. It was found that the 350 mA output power was 84....

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Veröffentlicht in:Japanese Journal of Applied Physics 2005-04, Vol.44 (4S), p.2462
Hauptverfasser: Chang, Chia-Sheng, Chang, Shoou-Jinn, Su, Yan-Kuin, Chen, Wei-Shou, Shen, Chien-Fu, Shei, Shih-Chang, Lo, Hsin-Ming
Format: Artikel
Sprache:eng
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Zusammenfassung:Nitride-based large size (i.e. 1 mm×1 mm) indium-tin-oxide (ITO) light emitting diodes (LEDs) were successfully fabricated. In order to enhance the output intensity of power chips, Al reflector was deposited by e-beam evaporator on the chip backside. It was found that the 350 mA output power was 84.8 mW (W-P-E=7.2%) at 460 nm for the power chip with ITO as p-contacts and Al as back-side reflector. It was also found that ITO power chip with Al reflector was more reliable.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.2462