Annealing Effects on Electroluminescence and Laser Operation of InGaAsSbN Quantum Well Diodes grown on InP Substrates

Annealing Effects on Electroluminescence and Laser Operation of InGaAsSbN Quantum Well Diodes grown on InP Substrates

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Veröffentlicht in:Japanese Journal of Applied Physics 2004-10, Vol.43 (No. 10A), p.L1320-L1322
Hauptverfasser: Kawamura, Yuichi, Nakagawa, Tomokatsu, Inoue, Naohisa
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container_end_page L1322
container_issue No. 10A
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container_title Japanese Journal of Applied Physics
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creator Kawamura, Yuichi
Nakagawa, Tomokatsu
Inoue, Naohisa
description
doi_str_mv 10.1143/JJAP.43.L1320
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ispartof Japanese Journal of Applied Physics, 2004-10, Vol.43 (No. 10A), p.L1320-L1322
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title Annealing Effects on Electroluminescence and Laser Operation of InGaAsSbN Quantum Well Diodes grown on InP Substrates
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