Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si

In this work, we investigate the annealing effect on defects in Si induced by boron high-energy (1.5 MeV) ion implantation with respect to implantation dose (1.1×10 13 and 5×10 13 cm -2 ) as well as annealing scheme [rapid thermal annealing (RTA) and furnace annealing (FA)]. The higher dose implantation resulted in more serious degradation of the minority carrier generation lifetime in the implanted layers. Also, the degree of lifetime recovery by either RTA or FA was very limited with the higher dose implantation, presumably due to the presence of the implantation-induced dislocations. The degradation of the lifetime in the lower dose-implanted sample could be significantly recovered by the annealing process, particularly the RTA scheme; this is presumably because RTA has a better ability to reduce the implantation-induced interstitials.