Fabrication and Characterization of Metal/Ferroelectric/Semiconductor Field Effect Transistor with the Ag/Bi 4 Ti 3 O 12 /p-Si(100) Structure

Metal–ferroelectric–semiconductor field-effect-transistors (MFS-FETs) with the Ag/Bi 4 Ti 3 O 12 /p-Si (100) structures were fabricated. The I ds – V g hysteresis curve of the FET shows the counter-clockwise direction, which demonstrates the charge of channel conductivity due to the ferroelectric polarization of Bi 4 Ti 3 O 12 and the memory window with a gate voltage of ±6 V was 1.2 V. The current ratio of I ds(on) to I ds(off) was over two orders in magnitude at zero gate voltage which indicates the MFS-FET can be used in nondestructive readout (NDRO) applications.