Fabrication and Characterization of Non-Doped SiO 2 Cladding Layer for Polarization-Insensitive Silica Waveguide by Using Plasma Enhanced Chemical Vapor Deposition
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2003-07, Vol.42 (Part 1, No. 7A), p.4340-4344 |
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| Sprache: | eng |
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| container_end_page | 4344 |
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| container_issue | Part 1, No. 7A |
| container_start_page | 4340 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 42 |
| creator | Ohkubo, Hiroyuki Hongo, Akihito Kashimura, Seiichi Ohkawa, Masahiro Ohira, Kentaro Uetsuka, Hisato Okano, Hiroaki |
| description | |
| doi_str_mv | 10.1143/JJAP.42.4340 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2003-07, Vol.42 (Part 1, No. 7A), p.4340-4344 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_42_4340 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Fabrication and Characterization of Non-Doped SiO 2 Cladding Layer for Polarization-Insensitive Silica Waveguide by Using Plasma Enhanced Chemical Vapor Deposition |
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