Fabrication of CoSi 2 -Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding

Fabrication of CoSi 2 -Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding

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Veröffentlicht in:Japanese Journal of Applied Physics 2003-06, Vol.42 (Part 1, No. 6B), p.3942-3945
Hauptverfasser: Yamamura, Shusaku, Yamauchi, Shouichi, Watanabe, Satoru, Tabe, Michiharu, Kasai, Toshio, Nonogaki, Youichi, Urisu, Tsuneo
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container_end_page 3945
container_issue Part 1, No. 6B
container_start_page 3942
container_title Japanese Journal of Applied Physics
container_volume 42
creator Yamamura, Shusaku
Yamauchi, Shouichi
Watanabe, Satoru
Tabe, Michiharu
Kasai, Toshio
Nonogaki, Youichi
Urisu, Tsuneo
description
doi_str_mv 10.1143/JJAP.42.3942
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_42_3942</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_42_3942</sourcerecordid><originalsourceid>FETCH-LOGICAL-c802-694893554e0cefc07c3ad3917d3637e2102424c65bd30cbe8605e80e361e6533</originalsourceid><addsrcrecordid>eNotkN1Kw0AQRhdRsFbvfIB9ADfuf5LLtFhtiShG8DJsNrMSqdmwm4J5e9Pq1cx8HxyGg9AtowljUtzvdsVrInkicsnP0IIJmRJJtTpHC0o5IzLn_BJdxfg1n1pJtkA_G9OEzpqx8z32Dq991WGOyeoQOmjJM4xmT0ozQcBzUR2aOAYzQsTOB7ztXTABWvwGbg_2xCia6MNwWqthzoKP1g8Tbib8YRwEsvJ92_Wf1-jCmX2Em_-5RNXm4X39RMqXx-26KInNKCc6l1kulJJALThLUytMK3KWtkKLFDijXHJptWpaQW0DmaYKMgpCM9BKiCW6-6Pa-Y8YwNVD6L5NmGpG66Oz-uislrw-OhO_-6BfHA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Fabrication of CoSi 2 -Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding</title><source>Institute of Physics Journals</source><creator>Yamamura, Shusaku ; Yamauchi, Shouichi ; Watanabe, Satoru ; Tabe, Michiharu ; Kasai, Toshio ; Nonogaki, Youichi ; Urisu, Tsuneo</creator><creatorcontrib>Yamamura, Shusaku ; Yamauchi, Shouichi ; Watanabe, Satoru ; Tabe, Michiharu ; Kasai, Toshio ; Nonogaki, Youichi ; Urisu, Tsuneo</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.42.3942</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2003-06, Vol.42 (Part 1, No. 6B), p.3942-3945</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c802-694893554e0cefc07c3ad3917d3637e2102424c65bd30cbe8605e80e361e6533</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Yamamura, Shusaku</creatorcontrib><creatorcontrib>Yamauchi, Shouichi</creatorcontrib><creatorcontrib>Watanabe, Satoru</creatorcontrib><creatorcontrib>Tabe, Michiharu</creatorcontrib><creatorcontrib>Kasai, Toshio</creatorcontrib><creatorcontrib>Nonogaki, Youichi</creatorcontrib><creatorcontrib>Urisu, Tsuneo</creatorcontrib><title>Fabrication of CoSi 2 -Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotkN1Kw0AQRhdRsFbvfIB9ADfuf5LLtFhtiShG8DJsNrMSqdmwm4J5e9Pq1cx8HxyGg9AtowljUtzvdsVrInkicsnP0IIJmRJJtTpHC0o5IzLn_BJdxfg1n1pJtkA_G9OEzpqx8z32Dq991WGOyeoQOmjJM4xmT0ozQcBzUR2aOAYzQsTOB7ztXTABWvwGbg_2xCia6MNwWqthzoKP1g8Tbib8YRwEsvJ92_Wf1-jCmX2Em_-5RNXm4X39RMqXx-26KInNKCc6l1kulJJALThLUytMK3KWtkKLFDijXHJptWpaQW0DmaYKMgpCM9BKiCW6-6Pa-Y8YwNVD6L5NmGpG66Oz-uislrw-OhO_-6BfHA</recordid><startdate>20030630</startdate><enddate>20030630</enddate><creator>Yamamura, Shusaku</creator><creator>Yamauchi, Shouichi</creator><creator>Watanabe, Satoru</creator><creator>Tabe, Michiharu</creator><creator>Kasai, Toshio</creator><creator>Nonogaki, Youichi</creator><creator>Urisu, Tsuneo</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20030630</creationdate><title>Fabrication of CoSi 2 -Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding</title><author>Yamamura, Shusaku ; Yamauchi, Shouichi ; Watanabe, Satoru ; Tabe, Michiharu ; Kasai, Toshio ; Nonogaki, Youichi ; Urisu, Tsuneo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c802-694893554e0cefc07c3ad3917d3637e2102424c65bd30cbe8605e80e361e6533</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yamamura, Shusaku</creatorcontrib><creatorcontrib>Yamauchi, Shouichi</creatorcontrib><creatorcontrib>Watanabe, Satoru</creatorcontrib><creatorcontrib>Tabe, Michiharu</creatorcontrib><creatorcontrib>Kasai, Toshio</creatorcontrib><creatorcontrib>Nonogaki, Youichi</creatorcontrib><creatorcontrib>Urisu, Tsuneo</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yamamura, Shusaku</au><au>Yamauchi, Shouichi</au><au>Watanabe, Satoru</au><au>Tabe, Michiharu</au><au>Kasai, Toshio</au><au>Nonogaki, Youichi</au><au>Urisu, Tsuneo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication of CoSi 2 -Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2003-06-30</date><risdate>2003</risdate><volume>42</volume><issue>Part 1, No. 6B</issue><spage>3942</spage><epage>3945</epage><pages>3942-3945</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.1143/JJAP.42.3942</doi><tpages>4</tpages></addata></record>
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ispartof Japanese Journal of Applied Physics, 2003-06, Vol.42 (Part 1, No. 6B), p.3942-3945
issn 0021-4922
1347-4065
language eng
recordid cdi_crossref_primary_10_1143_JJAP_42_3942
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title Fabrication of CoSi 2 -Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T21%3A24%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Fabrication%20of%20CoSi%202%20-Buried-Metal-Layer%20Si%20Substrates%20for%20Infrared%20Reflection%20Absorption%20Spectroscopy%20by%20Wafer-Bonding&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Yamamura,%20Shusaku&rft.date=2003-06-30&rft.volume=42&rft.issue=Part%201,%20No.%206B&rft.spage=3942&rft.epage=3945&rft.pages=3942-3945&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.42.3942&rft_dat=%3Ccrossref%3E10_1143_JJAP_42_3942%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true