Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation

Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2003-01, Vol.42 (Part 1, No. 1), p.23-27
Hauptverfasser: Hara, Akito, Yoshino, Kenichi, Takeuchi, Fumiyo, Sasaki, Nobuo
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 27
container_issue Part 1, No. 1
container_start_page 23
container_title Japanese Journal of Applied Physics
container_volume 42
creator Hara, Akito
Yoshino, Kenichi
Takeuchi, Fumiyo
Sasaki, Nobuo
description
doi_str_mv 10.1143/JJAP.42.23
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_42_23</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_42_23</sourcerecordid><originalsourceid>FETCH-LOGICAL-c377t-c775638e0149f19c8ef34c100a4bc558db7908fd1720d71bf8bdc32180b762643</originalsourceid><addsrcrecordid>eNotkM1KAzEcxIMoWKsXn-B_FlLztZvdYym2thQstsXjks0mbSTdlSRV-io-rVvqaRiY-Q0MQo-UjCgV_HmxGK9Ggo0Yv0IDyoXEguTZNRoQwigWJWO36C7Gz97mmaAD9Ls23ujkvg2sXbvzBk_CKSblvWsNXjvvdNfCLHQ_aQ8qQdobWAWDG2P7QAPjS_fd7Fyf6ywo2OxdC1PnD7AJqo0upi7AGeJVjFCfYBv7JZh0bXLtsTtG-FA9YqmiCTAPQTVOpZ52j26s8tE8_OsQbacvm8krXr7N5pPxEmsuZcJayiznhSFUlJaWujCWC00JUaLWWVY0tSxJYRsqGWkkrW1RN5ozWpBa5iwXfIieLlwduhiDsdVXcAcVThUl1fnV6vxqJVjFOP8Dc0Br_g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Hara, Akito ; Yoshino, Kenichi ; Takeuchi, Fumiyo ; Sasaki, Nobuo</creator><creatorcontrib>Hara, Akito ; Yoshino, Kenichi ; Takeuchi, Fumiyo ; Sasaki, Nobuo</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.42.23</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2003-01, Vol.42 (Part 1, No. 1), p.23-27</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c377t-c775638e0149f19c8ef34c100a4bc558db7908fd1720d71bf8bdc32180b762643</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Hara, Akito</creatorcontrib><creatorcontrib>Yoshino, Kenichi</creatorcontrib><creatorcontrib>Takeuchi, Fumiyo</creatorcontrib><creatorcontrib>Sasaki, Nobuo</creatorcontrib><title>Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNotkM1KAzEcxIMoWKsXn-B_FlLztZvdYym2thQstsXjks0mbSTdlSRV-io-rVvqaRiY-Q0MQo-UjCgV_HmxGK9Ggo0Yv0IDyoXEguTZNRoQwigWJWO36C7Gz97mmaAD9Ls23ujkvg2sXbvzBk_CKSblvWsNXjvvdNfCLHQ_aQ8qQdobWAWDG2P7QAPjS_fd7Fyf6ywo2OxdC1PnD7AJqo0upi7AGeJVjFCfYBv7JZh0bXLtsTtG-FA9YqmiCTAPQTVOpZ52j26s8tE8_OsQbacvm8krXr7N5pPxEmsuZcJayiznhSFUlJaWujCWC00JUaLWWVY0tSxJYRsqGWkkrW1RN5ozWpBa5iwXfIieLlwduhiDsdVXcAcVThUl1fnV6vxqJVjFOP8Dc0Br_g</recordid><startdate>20030101</startdate><enddate>20030101</enddate><creator>Hara, Akito</creator><creator>Yoshino, Kenichi</creator><creator>Takeuchi, Fumiyo</creator><creator>Sasaki, Nobuo</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20030101</creationdate><title>Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation</title><author>Hara, Akito ; Yoshino, Kenichi ; Takeuchi, Fumiyo ; Sasaki, Nobuo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c377t-c775638e0149f19c8ef34c100a4bc558db7908fd1720d71bf8bdc32180b762643</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hara, Akito</creatorcontrib><creatorcontrib>Yoshino, Kenichi</creatorcontrib><creatorcontrib>Takeuchi, Fumiyo</creatorcontrib><creatorcontrib>Sasaki, Nobuo</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hara, Akito</au><au>Yoshino, Kenichi</au><au>Takeuchi, Fumiyo</au><au>Sasaki, Nobuo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2003-01-01</date><risdate>2003</risdate><volume>42</volume><issue>Part 1, No. 1</issue><spage>23</spage><epage>27</epage><pages>23-27</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.1143/JJAP.42.23</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 2003-01, Vol.42 (Part 1, No. 1), p.23-27
issn 0021-4922
1347-4065
language eng
recordid cdi_crossref_primary_10_1143_JJAP_42_23
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T04%3A10%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Selective%20Single-Crystalline-Silicon%20Growth%20at%20the%20Pre-defined%20Active%20Region%20of%20a%20Thin%20Film%20Transistor%20on%20Glass%20by%20Using%20Continuous%20Wave%20Laser%20Irradiation&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Hara,%20Akito&rft.date=2003-01-01&rft.volume=42&rft.issue=Part%201,%20No.%201&rft.spage=23&rft.epage=27&rft.pages=23-27&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.42.23&rft_dat=%3Ccrossref%3E10_1143_JJAP_42_23%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true