Growth of Vertically Aligned Carbon Nanotubes inside Dome-structured Amorphous Silicon Holes by Plasma-enhanced Chemical Vapor Deposition

Growth of Vertically Aligned Carbon Nanotubes inside Dome-structured Amorphous Silicon Holes by Plasma-enhanced Chemical Vapor Deposition

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Veröffentlicht in:Japanese Journal of Applied Physics 2003, Vol.42 (Part 1, No. 3), p.1414-1415
Hauptverfasser: Park, Young Jun, Han, In Taek, Kim, Ha Jin, Lee, Nae Sung, Jin, Yong Wan, Kim, Jung Woo, Jung, Jae Eun, Park, Chong Yun, Kim, Jong Min
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container_end_page 1415
container_issue Part 1, No. 3
container_start_page 1414
container_title Japanese Journal of Applied Physics
container_volume 42
creator Park, Young Jun
Han, In Taek
Kim, Ha Jin
Lee, Nae Sung
Jin, Yong Wan
Kim, Jung Woo
Jung, Jae Eun
Park, Chong Yun
Kim, Jong Min
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doi_str_mv 10.1143/JJAP.42.1414
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Growth of Vertically Aligned Carbon Nanotubes inside Dome-structured Amorphous Silicon Holes by Plasma-enhanced Chemical Vapor Deposition
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