Evaluation of Lattice Strain in Silicon Substrate Beneath Aluminum Conductor Film Using High-Resolution X-Ray Microbeam Diffractometry

Evaluation of Lattice Strain in Silicon Substrate Beneath Aluminum Conductor Film Using High-Resolution X-Ray Microbeam Diffractometry

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Veröffentlicht in:Japanese Journal of Applied Physics 2002, Vol.41 (Part 1, No. 10), p.6094-6097
Hauptverfasser: Yokoyama, Kazushi, Kurihara, Hideaki, Takeda, Shingo, Urakawa, Masafumi, Watanabe, Kyoko, Katou, Madomi, Inoue, Naoyuki, Miyamoto, Naoki, Tsusaka, Yoshiyuki, Kagoshima, Yasushi, Matsui, Junji
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container_end_page 6097
container_issue Part 1, No. 10
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container_title Japanese Journal of Applied Physics
container_volume 41
creator Yokoyama, Kazushi
Kurihara, Hideaki
Takeda, Shingo
Urakawa, Masafumi
Watanabe, Kyoko
Katou, Madomi
Inoue, Naoyuki
Miyamoto, Naoki
Tsusaka, Yoshiyuki
Kagoshima, Yasushi
Matsui, Junji
description
doi_str_mv 10.1143/JJAP.41.6094
format Article
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title Evaluation of Lattice Strain in Silicon Substrate Beneath Aluminum Conductor Film Using High-Resolution X-Ray Microbeam Diffractometry
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