Copper Distribution near a SiO 2 /Si Interface under Low-Temperature Annealing
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2002-10, Vol.41 (Part 1, No. 10), p.5887-5893 |
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| Sprache: | eng |
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| container_end_page | 5893 |
|---|---|
| container_issue | Part 1, No. 10 |
| container_start_page | 5887 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 41 |
| creator | Hozawa, Kazuyuki Isomae, Seiichi Yugami, Jiro |
| description | |
| doi_str_mv | 10.1143/JJAP.41.5887 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2002-10, Vol.41 (Part 1, No. 10), p.5887-5893 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_41_5887 |
| source | Institute of Physics Journals |
| title | Copper Distribution near a SiO 2 /Si Interface under Low-Temperature Annealing |
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