Influence of Zinc Co-Doping on Carbon Doped InGaAs
We have investigated the effect of Zn co-doping in metal-organic vapor-phase epitaxy (MOVPE) growth of highly carbon doped In 0.53 Ga 0.47 As/InP layers using nitrogen carrier gas. A Zn concentration of 3×10 18 cm -3 for a C concentration of 1.8×10 19 cm -3 leads to a significantly increased minorit...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2001-02, Vol.40 (2B), p.L137 |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Keiper, Dietmar Sermage, Bernard Benchimol, Jean-Louis |
| description | We have investigated the effect of Zn co-doping in metal-organic vapor-phase epitaxy (MOVPE) growth of highly carbon doped In
0.53
Ga
0.47
As/InP layers using nitrogen carrier gas. A Zn concentration of 3×10
18
cm
-3
for a C concentration of 1.8×10
19
cm
-3
leads to a significantly increased minority carrier lifetime, and also to slightly improved majority carrier characteristics. At this concentration the Zn diffusion is not crucial, and this technique may have important applications for InP based hetero bipolar transistors (HBTs). |
| doi_str_mv | 10.1143/JJAP.40.L137 |
| format | Article |
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0.53
Ga
0.47
As/InP layers using nitrogen carrier gas. A Zn concentration of 3×10
18
cm
-3
for a C concentration of 1.8×10
19
cm
-3
leads to a significantly increased minority carrier lifetime, and also to slightly improved majority carrier characteristics. At this concentration the Zn diffusion is not crucial, and this technique may have important applications for InP based hetero bipolar transistors (HBTs).</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.40.L137</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2001-02, Vol.40 (2B), p.L137</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c313t-de9c794332fe4ecff1b3ead7b0c6f64ce70caf27f26d73fefb05a5ed79dbf7223</citedby><cites>FETCH-LOGICAL-c313t-de9c794332fe4ecff1b3ead7b0c6f64ce70caf27f26d73fefb05a5ed79dbf7223</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Keiper, Dietmar</creatorcontrib><creatorcontrib>Sermage, Bernard</creatorcontrib><creatorcontrib>Benchimol, Jean-Louis</creatorcontrib><title>Influence of Zinc Co-Doping on Carbon Doped InGaAs</title><title>Japanese Journal of Applied Physics</title><description>We have investigated the effect of Zn co-doping in metal-organic vapor-phase epitaxy (MOVPE) growth of highly carbon doped In
0.53
Ga
0.47
As/InP layers using nitrogen carrier gas. A Zn concentration of 3×10
18
cm
-3
for a C concentration of 1.8×10
19
cm
-3
leads to a significantly increased minority carrier lifetime, and also to slightly improved majority carrier characteristics. At this concentration the Zn diffusion is not crucial, and this technique may have important applications for InP based hetero bipolar transistors (HBTs).</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNotj8FKxDAURYMoWEd3fkA-wNQkL23oslQdOxR0oRs3IU3ek8qYDo0u_Hun6Opw7-LAYexayVIpA7e7XftcGlkOCuwJKxQYK4ysq1NWSKmVMI3W5-wi54_jrCujCqb7RPtvTAH5TPxtSoF3s7ibD1N653PinV_GI44HRt6nrW_zJTsjv8949c8Ne324f-kexfC07bt2EAEUfImITbCNAdCEBgORGgF9tKMMNdUmoJXBk7ak62iBkEZZ-QqjbeJIVmvYsJs_b1jmnBckd1imT7_8OCXd2uvWXmekW3vhF5SeSAY</recordid><startdate>200102</startdate><enddate>200102</enddate><creator>Keiper, Dietmar</creator><creator>Sermage, Bernard</creator><creator>Benchimol, Jean-Louis</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200102</creationdate><title>Influence of Zinc Co-Doping on Carbon Doped InGaAs</title><author>Keiper, Dietmar ; Sermage, Bernard ; Benchimol, Jean-Louis</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c313t-de9c794332fe4ecff1b3ead7b0c6f64ce70caf27f26d73fefb05a5ed79dbf7223</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Keiper, Dietmar</creatorcontrib><creatorcontrib>Sermage, Bernard</creatorcontrib><creatorcontrib>Benchimol, Jean-Louis</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Keiper, Dietmar</au><au>Sermage, Bernard</au><au>Benchimol, Jean-Louis</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of Zinc Co-Doping on Carbon Doped InGaAs</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2001-02</date><risdate>2001</risdate><volume>40</volume><issue>2B</issue><spage>L137</spage><pages>L137-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>We have investigated the effect of Zn co-doping in metal-organic vapor-phase epitaxy (MOVPE) growth of highly carbon doped In
0.53
Ga
0.47
As/InP layers using nitrogen carrier gas. A Zn concentration of 3×10
18
cm
-3
for a C concentration of 1.8×10
19
cm
-3
leads to a significantly increased minority carrier lifetime, and also to slightly improved majority carrier characteristics. At this concentration the Zn diffusion is not crucial, and this technique may have important applications for InP based hetero bipolar transistors (HBTs).</abstract><doi>10.1143/JJAP.40.L137</doi></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2001-02, Vol.40 (2B), p.L137 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_40_L137 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Influence of Zinc Co-Doping on Carbon Doped InGaAs |
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