Influence of Zinc Co-Doping on Carbon Doped InGaAs

We have investigated the effect of Zn co-doping in metal-organic vapor-phase epitaxy (MOVPE) growth of highly carbon doped In 0.53 Ga 0.47 As/InP layers using nitrogen carrier gas. A Zn concentration of 3×10 18 cm -3 for a C concentration of 1.8×10 19 cm -3 leads to a significantly increased minority carrier lifetime, and also to slightly improved majority carrier characteristics. At this concentration the Zn diffusion is not crucial, and this technique may have important applications for InP based hetero bipolar transistors (HBTs).