Scanning Tunneling Microscopy Study of the c(4×4) Structure Formation in the Sub-Monolayer Sb/Si(100) System

Upon Sb desorption from a Sb-saturated Si(100) surface, the c (4×4) structure formed at about 0.25 monolayer Sb coverage. The c (4×4) reconstruction has been found to develop best when the surface is slightly contaminated, plausibly, by carbon. The Si(100)- c (4×4)-Sb surface shows up in the high-re...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2001-10, Vol.40 (10R), p.6069
Hauptverfasser:	A. Saranin, Alexander, V. Zotov, Andrey, G. Kotlyar, Vasiliy, G. Lifshits, Victor, Osamu Kubo, Osamu Kubo, Toru Harada, Toru Harada, Tadashi Kobayashi, Tadashi Kobayashi, Nobumitsu Yamaoka, Nobumitsu Yamaoka, Mitsuhiro Katayama, Mitsuhiro Katayama, Kenjiro Oura, Kenjiro Oura
Format:	Artikel
Sprache:	eng
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Zusammenfassung:	Upon Sb desorption from a Sb-saturated Si(100) surface, the c (4×4) structure formed at about 0.25 monolayer Sb coverage. The c (4×4) reconstruction has been found to develop best when the surface is slightly contaminated, plausibly, by carbon. The Si(100)- c (4×4)-Sb surface shows up in the high-resolution filled state scanning tunneling microscopy images as being very similar to that of the recently reported c (4×4)-Si reconstruction. Here the main features of the Si(100)- c (4×4)-Sb structure are identified and the possible atomic arrangement is discussed.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/JJAP.40.6069