Dielectric Properties of Crystallization Process from Amorphous Bi 4 Ti 3 O 12

The dielectric constant of amorphous Bi 4 Ti 3 O 12 prepared by a rapid quenching method was measured. It was found that the as-quenched sample shows a distinct dielectric anomaly at approximately 600°C. With further heating, the dielectric constant shows an anomalously high value above 750°C. In the sample heated to the 900°C range, the recovery of the ferroelectric Bi 4 Ti 3 O 12 crystalline phase was confirmed by observing the dielectric anomaly at the Curie point.