Epitaxial Growth of γ-In 2 Se 3 Films by Molecular Beam Epitaxy
Epitaxial growth of γ-In 2 Se 3 film was investigated by molecular beam epitaxy (MBE). γ-In 2 Se 3 epiataxial films with a defect wurtzite structure were successfully grown on GaAs(111)B substrates for the first time. The crystal structure of the γ-In 2 Se 3 epitaxial film was determined by X-ray di...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 2001-02, Vol.40 (2R), p.509 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | Epitaxial growth of γ-In
2
Se
3
film was investigated by molecular beam epitaxy (MBE). γ-In
2
Se
3
epiataxial films with a defect wurtzite structure were successfully grown on GaAs(111)B substrates for the first time. The crystal structure of the γ-In
2
Se
3
epitaxial film was determined by X-ray diffraction (XRD) and atomic force microscopy (AFM). It was found that γ-In
2
Se
3
epitaxial films exhibit a vacancy-ordered crystal structure and that sharrow hexagonal cone structures were formed on the film surface. Furthermore, optical properties of the γ-In
2
Se
3
epitaxial films were investigated by spatially resolved cathodoluminescence (CL). |
|---|---|
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.40.509 |