Structural Transformations During Sb Adsorption on Si(111)–In(4×1) Reconstruction

Understanding of initial stages of compound semiconductor growth on Si substrates is important for achieving atomically flat heterointerfaces, which are necessary for the fabrication of many advanced devices. Present report details the formation of InSb(2×2) reconstruction on the Si(111) substrate by Sb adsorption on Si(111)–In(4×1) surface phase and illustrates the structural transformations caused by the reordering of excess In. Higher Sb adsorption destroys the InSb phase with the coalescence of most of the In into 3D islands. This coalescence is accompanied by the formation of well-ordered Si(111)–Sb(2×1) phase between 260 and 350°C. Possible atomistic mechanisms responsible for the structural transformations are detailed.