Monitoring of Si Molecular-Beam Epitaxial Growth by an Ellipsometric Method
Ellipsometric measurements were applied to investigate Si homoepitaxial growth by molecular-beam epitaxy on a Si(111) substrate, and the changes in film thickness and optical parameters were monitored. The reflection high-energy electron diffraction (RHEED) intensity oscillation monitoring method wa...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2001-01, Vol.40 (1R), p.371 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Ellipsometric measurements were applied to investigate Si homoepitaxial growth by molecular-beam epitaxy on a Si(111) substrate, and the changes in film thickness and optical parameters were monitored. The reflection high-energy electron diffraction (RHEED) intensity oscillation monitoring method was also employed for comparison. In the epitaxial growth mode, Ψ and Δ values showed only a small spiral variation and the analyzed optical constants were nearly the same as those of single-crystal Si. The film thickness obtained by the ellipsometric method exhibited good agreement with that obtained by RHEED oscillation as well as by a quartz crystal monitor. Thus, it was shown that the film thickness monitoring by ellipsometry is useful even for the Si/Si homoepitaxial growth with a step flow mechanism, where the RHEED oscillation monitoring method is not available. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.40.371 |