Electron Motion Three-Dimensional Confinement for Microelectronic Vacuum Gauges with Field Emitters
Novel microelectronics vacuum gauges using field emitters are proposed and the three-dimensional (3D) confinement of electron motion is numerically analyzed. For the case of magnetron and inverted-magnetron structures, the two-dimensional (2D) confinement of electron motion takes place when the elec...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2001-04, Vol.40 (4R), p.2165 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Novel microelectronics vacuum gauges using field emitters are proposed and the three-dimensional (3D) confinement of electron motion is numerically analyzed. For the case of magnetron and inverted-magnetron structures, the two-dimensional (2D) confinement of electron motion takes place when the electrons move subject to crossed electric
E
and magnetic
B
fields. The radial electric field is applied between two cylindrical surfaces coaxial around the
X
axis, which is also the direction of the applied magnetic field
B
. A similar structure named “orbitip” is used for electron 2D confinement without magnetic fields for special conditions concerning the electron launching. For all above-mentioned devices, designs involving a region of minimal potential energy for the electron along the axial
X
direction may ensure the electron motion confinement along this direction. Such configurations are obtained if the inner cylindrical electrode (or the outer one, or both) has a variable radius and also an external planar electrode is used. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.40.2165 |