Partial Recovery of Photodegradation at Room Temperature in Hydrogenated Amorphous Silicon

Partial Recovery of Photodegradation at Room Temperature in Hydrogenated Amorphous Silicon

Detailed ESR measurements disclosed that neutral Si dangling bonds (DBs) created by light soaking (LS) disappear partially at room temperature in a few hours after LS. In contrast metastable DBs created by thermal quenching remain unchanged at room temperature. It is suggested that a part of the Si...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2001, Vol.40 (3R), p.1244, Article 1244
Hauptverfasser: Shimizu, Tatsuo, Maehara, Takanori, Mitani, Masahiro, Kumeda, Minoru
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Detailed ESR measurements disclosed that neutral Si dangling bonds (DBs) created by light soaking (LS) disappear partially at room temperature in a few hours after LS. In contrast metastable DBs created by thermal quenching remain unchanged at room temperature. It is suggested that a part of the Si DBs created by LS have a small activation energy for thermal annealing.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.1244