Study of Bump Formation in Integrated Chemical Vapor Deposition–Physical Vapor Deposition Aluminum Filling Process

Aluminum (Al) bumps are observed over contact holes when the chemical vapor deposition-physical vapor deposition (CVD-PVD) Al filling process is employed in sub micron technology. Boundaries of bumpy Al grains are formed inside the contact holes, while those of smooth Al grains are formed at the nec...

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Veröffentlicht in:Japanese Journal of Applied Physics 2001-03, Vol.40 (3R), p.1172
Hauptverfasser: Lee, Joo Wan, Kim, Byoung Youp, Han, Sang Yeop, Lee, Won-Jun, Kim, Jun Ki, Park, Jin-Won, Roh, Jae Sung, Kim, Yeong-Cheol
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Sprache:eng
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Zusammenfassung:Aluminum (Al) bumps are observed over contact holes when the chemical vapor deposition-physical vapor deposition (CVD-PVD) Al filling process is employed in sub micron technology. Boundaries of bumpy Al grains are formed inside the contact holes, while those of smooth Al grains are formed at the neck of the contact holes. Transmission electron microscopy (TEM) is employed to observe the crystallographic orientation of bumpy and smooth Al grains, and the results are and on {100} silicon surface, respectively. It is known that the growth rate of Al in the direction is higher than that in the direction because of its lower plane density. The difference in growth rate between the direction and the direction is believed to lead to bump formation. A modified PVD Al process to form grain boundaries at the neck of the holes is developed to prevent bumpy Al formation and fill the holes completely.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.1172