Picosecond Time-Resolved X-Ray Diffraction from Si(111) under High-Power Laser Irradiation

Picosecond Time-Resolved X-Ray Diffraction from Si(111) under High-Power Laser Irradiation

Picosecond time-resolved X-ray diffraction is used to observe Si(111) under 300 ps pulsed laser irradiation at a power density above the damage threshold. The pulsed X-rays (of about 9 ps pulse width) are generated by focusing a femtosecond laser on an Fe target. The rocking curves are obtained with...

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Veröffentlicht in:Japanese Journal of Applied Physics 2000-10, Vol.39 (10A), p.L984
Hauptverfasser: Hironaka, Yoichiro, Yazaki, Akio, Saito, Fumikazu, Nakamura, Kazutaka G., Kondo, Ken-ichi
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container_issue 10A
container_start_page L984
container_title Japanese Journal of Applied Physics
container_volume 39
creator Hironaka, Yoichiro
Yazaki, Akio
Saito, Fumikazu
Nakamura, Kazutaka G.
Kondo, Ken-ichi
description Picosecond time-resolved X-ray diffraction is used to observe Si(111) under 300 ps pulsed laser irradiation at a power density above the damage threshold. The pulsed X-rays (of about 9 ps pulse width) are generated by focusing a femtosecond laser on an Fe target. The rocking curves are obtained with a time step of 50 ps. The transient lattice compression (0.9% at maximum) driven by laser-induced dielectric breakdown is directly observed.
doi_str_mv 10.1143/JJAP.39.L984
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title Picosecond Time-Resolved X-Ray Diffraction from Si(111) under High-Power Laser Irradiation
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