Picosecond Time-Resolved X-Ray Diffraction from Si(111) under High-Power Laser Irradiation

Picosecond Time-Resolved X-Ray Diffraction from Si(111) under High-Power Laser Irradiation

Picosecond time-resolved X-ray diffraction is used to observe Si(111) under 300 ps pulsed laser irradiation at a power density above the damage threshold. The pulsed X-rays (of about 9 ps pulse width) are generated by focusing a femtosecond laser on an Fe target. The rocking curves are obtained with...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2000-10, Vol.39 (10A), p.L984
Hauptverfasser: Hironaka, Yoichiro, Yazaki, Akio, Saito, Fumikazu, Nakamura, Kazutaka G., Kondo, Ken-ichi
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Picosecond time-resolved X-ray diffraction is used to observe Si(111) under 300 ps pulsed laser irradiation at a power density above the damage threshold. The pulsed X-rays (of about 9 ps pulse width) are generated by focusing a femtosecond laser on an Fe target. The rocking curves are obtained with a time step of 50 ps. The transient lattice compression (0.9% at maximum) driven by laser-induced dielectric breakdown is directly observed.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.L984