Flat and Large Poly-Si Grains by a Continuous Process of Plasma-Enhanced Chemical Vapor Deposition of a-Si and Its Direct Laser Crystallization

A multichamber processor was developed for a 150 mm×150 mm-sized substrate which combines chemical vapor deposition (CVD) reactors and a laser annealer. Deposition of a-Si was carried out at 430°C using a new high-temperature heater and the hydrogen content was reduced to 6 at%. The continuous process of a-Si deposition and one-step direct laser crystallization provides a simple poly-Si preparation process which yields flat poly-Si grains (< R rms : 4 nm). It was also found that dehydrogenation treatment increased film roughness.